Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board
The purpose of this project is to implement and characterize a single state Pseudomorphic High Electron Mobility Transistor (PHEMT) Low Noise Amplifier (LNA) at 4GHz. The LNA used in this project is Agilent’s MGA-72543 which has an operating frequency from 0.1 GHz to 6.0 GHz. This economical, easy...
| Main Author: | |
|---|---|
| Format: | Monograph |
| Language: | English |
| Published: |
Universiti Sains Malaysia
2006
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/58724/1/Implementation%20And%20Characterization%20Of%20Low%20Noise%20Amplifier%20At%204GHz%20Using%20RF%20Test%20Board_Khursiah%20Zainal%20Mokhtar.pdf |
| _version_ | 1825907953761255424 |
|---|---|
| author | Zainal Mokhtar, Khursiah |
| author_facet | Zainal Mokhtar, Khursiah |
| author_sort | Zainal Mokhtar, Khursiah |
| collection | USM |
| description | The purpose of this project is to implement and characterize a single state Pseudomorphic High Electron Mobility Transistor (PHEMT) Low Noise Amplifier (LNA) at 4GHz. The LNA used in this project is Agilent’s MGA-72543 which has an operating
frequency from 0.1 GHz to 6.0 GHz. This economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA) is designed for an adaptive CDMA receiver LNA and adaptive CDMA transmit driver amplifier. This LNA features a minimum noise figure of 1.4dB and
14dB associated gain from a single stage, feedback FET amplifier. It is housed in the SOT343 package and is part of the Agilent Technologies CDMA RF chipset. The quantities measured are input reflection coefficient, S11; gain, S21; noise figure, NF; P1 dB compression and input third-order intercept point, IIP3. The LNA has a bypass switch
function on chip as well as an adjustable IIP3. The input of the MGA-72543 is internally optimally matched for a low noise figure. However, the input is additionally externally
matched for a lower voltage standing wave ratio, VSWR. A simulation has also been performed. However, only the simulation on input reflection coefficient, S11; gain, S21 and
noise figure, NF could be done by using Low Noise Amplifier S-parameter model the simulation against the linearity needs the usage of Low Noise Amplifier S-parameter large signal model. This particular model signal is not availabe in the ADS software. The characterization gives full insight into the performance of the GaAs Low Noise Amplifier scheme. |
| first_indexed | 2024-03-06T16:11:47Z |
| format | Monograph |
| id | usm.eprints-58724 |
| institution | Universiti Sains Malaysia |
| language | English |
| last_indexed | 2024-03-06T16:11:47Z |
| publishDate | 2006 |
| publisher | Universiti Sains Malaysia |
| record_format | dspace |
| spelling | usm.eprints-587242023-05-29T08:59:10Z http://eprints.usm.my/58724/ Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board Zainal Mokhtar, Khursiah T Technology TK Electrical Engineering. Electronics. Nuclear Engineering The purpose of this project is to implement and characterize a single state Pseudomorphic High Electron Mobility Transistor (PHEMT) Low Noise Amplifier (LNA) at 4GHz. The LNA used in this project is Agilent’s MGA-72543 which has an operating frequency from 0.1 GHz to 6.0 GHz. This economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA) is designed for an adaptive CDMA receiver LNA and adaptive CDMA transmit driver amplifier. This LNA features a minimum noise figure of 1.4dB and 14dB associated gain from a single stage, feedback FET amplifier. It is housed in the SOT343 package and is part of the Agilent Technologies CDMA RF chipset. The quantities measured are input reflection coefficient, S11; gain, S21; noise figure, NF; P1 dB compression and input third-order intercept point, IIP3. The LNA has a bypass switch function on chip as well as an adjustable IIP3. The input of the MGA-72543 is internally optimally matched for a low noise figure. However, the input is additionally externally matched for a lower voltage standing wave ratio, VSWR. A simulation has also been performed. However, only the simulation on input reflection coefficient, S11; gain, S21 and noise figure, NF could be done by using Low Noise Amplifier S-parameter model the simulation against the linearity needs the usage of Low Noise Amplifier S-parameter large signal model. This particular model signal is not availabe in the ADS software. The characterization gives full insight into the performance of the GaAs Low Noise Amplifier scheme. Universiti Sains Malaysia 2006-05-01 Monograph NonPeerReviewed application/pdf en http://eprints.usm.my/58724/1/Implementation%20And%20Characterization%20Of%20Low%20Noise%20Amplifier%20At%204GHz%20Using%20RF%20Test%20Board_Khursiah%20Zainal%20Mokhtar.pdf Zainal Mokhtar, Khursiah (2006) Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board. Project Report. Universiti Sains Malaysia, Pusat Pengajian Kejuruteraan Elektrik dan Elektronik. (Submitted) |
| spellingShingle | T Technology TK Electrical Engineering. Electronics. Nuclear Engineering Zainal Mokhtar, Khursiah Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board |
| title | Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board |
| title_full | Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board |
| title_fullStr | Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board |
| title_full_unstemmed | Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board |
| title_short | Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board |
| title_sort | implementation and characterization of low noise amplifier at 4ghz using rf test board |
| topic | T Technology TK Electrical Engineering. Electronics. Nuclear Engineering |
| url | http://eprints.usm.my/58724/1/Implementation%20And%20Characterization%20Of%20Low%20Noise%20Amplifier%20At%204GHz%20Using%20RF%20Test%20Board_Khursiah%20Zainal%20Mokhtar.pdf |
| work_keys_str_mv | AT zainalmokhtarkhursiah implementationandcharacterizationoflownoiseamplifierat4ghzusingrftestboard |