Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films
The growth of highly crystalline c-plane AlN 〈002〉 is extremely difficult, entailing high temperature and ultrahigh vacuum condition. In sputtering technique, the addition of nitrogen into argon sputtering gas can significantly assist the formation of AlN 〈002〉 at low temperature. We incorporated pu...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/10105/1/J16245_20d070df8d4da144f68593929aa9833e.pdf |
| _version_ | 1796870101767553024 |
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| author | Abd Samad, Muhammad Izzuddin Mohd Noor, Mimiwaty Nayan, Nafarizal Abu Bakar, Ahmad Shuhaimi Mansor, Marwan Mahmood Zuhdi, Ahmad Wafi Hamzah, Azrul Azlan Latif, Rhonira |
| author_facet | Abd Samad, Muhammad Izzuddin Mohd Noor, Mimiwaty Nayan, Nafarizal Abu Bakar, Ahmad Shuhaimi Mansor, Marwan Mahmood Zuhdi, Ahmad Wafi Hamzah, Azrul Azlan Latif, Rhonira |
| author_sort | Abd Samad, Muhammad Izzuddin |
| collection | UTHM |
| description | The growth of highly crystalline c-plane AlN 〈002〉 is extremely difficult, entailing high temperature and ultrahigh vacuum condition. In sputtering technique, the addition of nitrogen into argon sputtering gas can significantly assist the formation of AlN 〈002〉 at low temperature. We incorporated purified nitrogen gas and observed
the consistent formation of single crystal 〈002〉 AlN thin film layer sputter-deposited on Mo/Si substrate from the
AlN ceramic target. Small presence of oxygen content within AlN crystal relates to the preferential growth of AlN
〈002〉. High oxygen content in AlN thin film due to the use of unpurified nitrogen and argon only sputtering gas
prefers the formation of AlN 〈100〉. Different AlN crystal structure has shown distinct thin film properties and
piezoelectric response. This work provides a method to control the crystal structure of the sputter-deposited AlN
thin film layer, either c-plane AlN 〈002〉, a-plane AlN 〈100〉 or polycrystalline AlN. |
| first_indexed | 2024-03-05T22:04:34Z |
| format | Article |
| id | uthm.eprints-10105 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | English |
| last_indexed | 2024-03-05T22:04:34Z |
| publishDate | 2023 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | uthm.eprints-101052023-10-17T06:54:36Z http://eprints.uthm.edu.my/10105/ Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films Abd Samad, Muhammad Izzuddin Mohd Noor, Mimiwaty Nayan, Nafarizal Abu Bakar, Ahmad Shuhaimi Mansor, Marwan Mahmood Zuhdi, Ahmad Wafi Hamzah, Azrul Azlan Latif, Rhonira TP Chemical technology The growth of highly crystalline c-plane AlN 〈002〉 is extremely difficult, entailing high temperature and ultrahigh vacuum condition. In sputtering technique, the addition of nitrogen into argon sputtering gas can significantly assist the formation of AlN 〈002〉 at low temperature. We incorporated purified nitrogen gas and observed the consistent formation of single crystal 〈002〉 AlN thin film layer sputter-deposited on Mo/Si substrate from the AlN ceramic target. Small presence of oxygen content within AlN crystal relates to the preferential growth of AlN 〈002〉. High oxygen content in AlN thin film due to the use of unpurified nitrogen and argon only sputtering gas prefers the formation of AlN 〈100〉. Different AlN crystal structure has shown distinct thin film properties and piezoelectric response. This work provides a method to control the crystal structure of the sputter-deposited AlN thin film layer, either c-plane AlN 〈002〉, a-plane AlN 〈100〉 or polycrystalline AlN. Elsevier 2023 Article PeerReviewed text en http://eprints.uthm.edu.my/10105/1/J16245_20d070df8d4da144f68593929aa9833e.pdf Abd Samad, Muhammad Izzuddin and Mohd Noor, Mimiwaty and Nayan, Nafarizal and Abu Bakar, Ahmad Shuhaimi and Mansor, Marwan and Mahmood Zuhdi, Ahmad Wafi and Hamzah, Azrul Azlan and Latif, Rhonira (2023) Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films. Scripta Materialia, 226. pp. 1-7. https://doi.org/10.1016/j.scriptamat.2022.115228 |
| spellingShingle | TP Chemical technology Abd Samad, Muhammad Izzuddin Mohd Noor, Mimiwaty Nayan, Nafarizal Abu Bakar, Ahmad Shuhaimi Mansor, Marwan Mahmood Zuhdi, Ahmad Wafi Hamzah, Azrul Azlan Latif, Rhonira Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title | Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_full | Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_fullStr | Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_full_unstemmed | Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_short | Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films |
| title_sort | effects of argon nitrogen sputtering gas on the microstructural crystallographic and piezoelectric properties of aln thin films |
| topic | TP Chemical technology |
| url | http://eprints.uthm.edu.my/10105/1/J16245_20d070df8d4da144f68593929aa9833e.pdf |
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