Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method
Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping...
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| Format: | Article |
| Language: | English |
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Mdpi
2023
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| Online Access: | http://eprints.uthm.edu.my/10164/1/J16304_9a334b81fda31f7f7111e5f60fb92743.pdf |
| _version_ | 1796870113407795200 |
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| author | Raship, Nur Amaliyana Mohd Tawil, Siti Nooraya Nayan, Nafarizal Ismail, Khadijah |
| author_facet | Raship, Nur Amaliyana Mohd Tawil, Siti Nooraya Nayan, Nafarizal Ismail, Khadijah |
| author_sort | Raship, Nur Amaliyana |
| collection | UTHM |
| description | Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of
different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements
in the UV–Vis wavelength range indicated that the film’s optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current–voltage (I-V) characterization carried out of the fabricated n-ZnO/p-Si heterostructure, in dark conditions
at room temperature. From these measurements, the n-ZnO-based DMS/p-Si heterojunction diode with the use of (Gd, Al) co-doped ZnO film showed the lowest leakage current of 1.28 × 10−8 A and an ideality factor η of 1.11, close to the ideal diode behavior of η = 1, compared to the n-Gd-doped
ZnO/p-Si and n-undoped ZnO/p-Si heterojunction diodes. |
| first_indexed | 2024-03-05T22:04:44Z |
| format | Article |
| id | uthm.eprints-10164 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | English |
| last_indexed | 2024-03-05T22:04:44Z |
| publishDate | 2023 |
| publisher | Mdpi |
| record_format | dspace |
| spelling | uthm.eprints-101642023-10-18T02:21:54Z http://eprints.uthm.edu.my/10164/ Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method Raship, Nur Amaliyana Mohd Tawil, Siti Nooraya Nayan, Nafarizal Ismail, Khadijah TP Chemical technology Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements in the UV–Vis wavelength range indicated that the film’s optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current–voltage (I-V) characterization carried out of the fabricated n-ZnO/p-Si heterostructure, in dark conditions at room temperature. From these measurements, the n-ZnO-based DMS/p-Si heterojunction diode with the use of (Gd, Al) co-doped ZnO film showed the lowest leakage current of 1.28 × 10−8 A and an ideality factor η of 1.11, close to the ideal diode behavior of η = 1, compared to the n-Gd-doped ZnO/p-Si and n-undoped ZnO/p-Si heterojunction diodes. Mdpi 2023 Article PeerReviewed text en http://eprints.uthm.edu.my/10164/1/J16304_9a334b81fda31f7f7111e5f60fb92743.pdf Raship, Nur Amaliyana and Mohd Tawil, Siti Nooraya and Nayan, Nafarizal and Ismail, Khadijah (2023) Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method. Materials, 16 (2392). pp. 1-16. https://doi.org/10.3390/ma16062392 |
| spellingShingle | TP Chemical technology Raship, Nur Amaliyana Mohd Tawil, Siti Nooraya Nayan, Nafarizal Ismail, Khadijah Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method |
| title | Effect of Al Concentration on Structural, Optical and Electrical
Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0)
Heterojunction Structures Prepared via Co-Sputtering Method |
| title_full | Effect of Al Concentration on Structural, Optical and Electrical
Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0)
Heterojunction Structures Prepared via Co-Sputtering Method |
| title_fullStr | Effect of Al Concentration on Structural, Optical and Electrical
Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0)
Heterojunction Structures Prepared via Co-Sputtering Method |
| title_full_unstemmed | Effect of Al Concentration on Structural, Optical and Electrical
Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0)
Heterojunction Structures Prepared via Co-Sputtering Method |
| title_short | Effect of Al Concentration on Structural, Optical and Electrical
Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0)
Heterojunction Structures Prepared via Co-Sputtering Method |
| title_sort | effect of al concentration on structural optical and electrical properties of gd al co doped zno and its n zno p si 1 0 0 heterojunction structures prepared via co sputtering method |
| topic | TP Chemical technology |
| url | http://eprints.uthm.edu.my/10164/1/J16304_9a334b81fda31f7f7111e5f60fb92743.pdf |
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