Modelling of advanced submicron gate InGaAs/InAIAs pHEMTS and RTD devices for very high frequency applications
InP based InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs) have shown outstanding performances, which makes them prominent in high frequency mm-wave and submillimeter-wave applications. However, conventional InGaAs/InAlAs pHEMTs have major drawbacks, i.e., very low break...
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| Format: | Thesis |
| Language: | English |
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2015
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| Online Access: | http://eprints.uthm.edu.my/1752/1/24p%20WARSUZARINA%20MAT%20JUBADI.pdf |