Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology
This research presents failure analysis (FA) works on gate oxide defect of Bi�polar CMOS Diffuse (BCD) technology. The latent problem with electrical degradation in the CMOS performance is due to gate oxide defect. The defect was well known affects the CMOS reliability after certain period of ti...
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| Format: | Thesis |
| Language: | English English English |
| Published: |
2013
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| Online Access: | http://eprints.uthm.edu.my/1902/1/24p%20FARISAL%20ABDULLAH.pdf http://eprints.uthm.edu.my/1902/2/FARISAL%20ABDULLAH%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/1902/3/FARISAL%20ABDULLAH%20WATERMARK.pdf |
| _version_ | 1796868547042869248 |
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| author | Abdullah, Farisal |
| author_facet | Abdullah, Farisal |
| author_sort | Abdullah, Farisal |
| collection | UTHM |
| description | This research presents failure analysis (FA) works on gate oxide defect of Bi�polar CMOS Diffuse (BCD) technology. The latent problem with electrical
degradation in the CMOS performance is due to gate oxide defect. The defect was
well known affects the CMOS reliability after certain period of time, temperatures
and stress. The FA techniques used for this research were developed using a
combination of IDDQ scan test pattern, photo localization by the emission microscope
and Field Emission Scanning Electron Microscopy (FE-SEM) for defect inspection.
The FA methods successfully evaluated on few failing samples which were taken
from customer return with IDDQ failure range from 50µA until less than 1mA.
Concurrently, the spotted excessive emission found on the defective samples during
photo localization step indicates of gate oxide defect. The defect well observed with
FE-SEM analysis on all tested samples after the physical analysis accomplishment
until oxide layer. The proposed technique shows an effective method to compensate
the existing FA difficulty on gate oxide defect faced by IC manufacturer in
micrometer and nanometer scale technology, which having more metal
interconnection layers with higher dense. The proposed technique able to construct
promising result compared to the conventional techniques which used in the current
FA practice due to certain extends of limitation. |
| first_indexed | 2024-03-05T21:41:24Z |
| format | Thesis |
| id | uthm.eprints-1902 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | English English English |
| last_indexed | 2024-03-05T21:41:24Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | uthm.eprints-19022021-10-12T04:32:30Z http://eprints.uthm.edu.my/1902/ Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology Abdullah, Farisal TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics This research presents failure analysis (FA) works on gate oxide defect of Bi�polar CMOS Diffuse (BCD) technology. The latent problem with electrical degradation in the CMOS performance is due to gate oxide defect. The defect was well known affects the CMOS reliability after certain period of time, temperatures and stress. The FA techniques used for this research were developed using a combination of IDDQ scan test pattern, photo localization by the emission microscope and Field Emission Scanning Electron Microscopy (FE-SEM) for defect inspection. The FA methods successfully evaluated on few failing samples which were taken from customer return with IDDQ failure range from 50µA until less than 1mA. Concurrently, the spotted excessive emission found on the defective samples during photo localization step indicates of gate oxide defect. The defect well observed with FE-SEM analysis on all tested samples after the physical analysis accomplishment until oxide layer. The proposed technique shows an effective method to compensate the existing FA difficulty on gate oxide defect faced by IC manufacturer in micrometer and nanometer scale technology, which having more metal interconnection layers with higher dense. The proposed technique able to construct promising result compared to the conventional techniques which used in the current FA practice due to certain extends of limitation. 2013-03 Thesis NonPeerReviewed text en http://eprints.uthm.edu.my/1902/1/24p%20FARISAL%20ABDULLAH.pdf text en http://eprints.uthm.edu.my/1902/2/FARISAL%20ABDULLAH%20COPYRIGHT%20DECLARATION.pdf text en http://eprints.uthm.edu.my/1902/3/FARISAL%20ABDULLAH%20WATERMARK.pdf Abdullah, Farisal (2013) Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology. Masters thesis, Universiti Tun Hussein Onn Malaysia. |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics Abdullah, Farisal Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology |
| title | Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology |
| title_full | Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology |
| title_fullStr | Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology |
| title_full_unstemmed | Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology |
| title_short | Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology |
| title_sort | technique of failure analysis for gate oxide defect of bi polar cmos diffuse bcd technology |
| topic | TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics |
| url | http://eprints.uthm.edu.my/1902/1/24p%20FARISAL%20ABDULLAH.pdf http://eprints.uthm.edu.my/1902/2/FARISAL%20ABDULLAH%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/1902/3/FARISAL%20ABDULLAH%20WATERMARK.pdf |
| work_keys_str_mv | AT abdullahfarisal techniqueoffailureanalysisforgateoxidedefectofbipolarcmosdiffusebcdtechnology |