Simulation, fabrication and characterization of PMOS transistor device
In a low supply voltage CMOS technology, it is desirable to scale threshold voltage and gate length for improving circuit performance. Therefore, a project has been carried out inside KUiTTHO's microelectronic cleanroom to produce a method that has better l ow power/low voltage current concent...
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| Format: | Thesis |
| Language: | English English English |
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2006
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| Online Access: | http://eprints.uthm.edu.my/2230/1/SITI%20IDZURA%20BINTI%20YUSUF%20-%20declaration.pdf http://eprints.uthm.edu.my/2230/2/SITI%20IDZURA%20BINTI%20YUSUF%20-%2024p.pdf http://eprints.uthm.edu.my/2230/3/SITI%20IDZURA%20BINTI%20YUSUF%20-%20fulltext.pdf |
| _version_ | 1796868609237057536 |
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| author | Yusuf, Siti Idzura |
| author_facet | Yusuf, Siti Idzura |
| author_sort | Yusuf, Siti Idzura |
| collection | UTHM |
| description | In a low supply voltage CMOS technology, it is desirable to scale threshold
voltage and gate length for improving circuit performance. Therefore, a project has been carried out inside KUiTTHO's microelectronic cleanroom to produce a method that has better l ow power/low voltage current concentrate on p-channel (PMOS). An experiment was also done to determine the right parameter value to b e used for fabrication process
such as oxidation process thickness rate, sheet resistance and metal thickness. From the parameter value obtained, 0.3 m m and 0.5 mm PMOS transistor had been successfully produced. Fabrication simulation was performed to produce a 0.1 |am and 0.3p.m PMOS transistor by using the ISE-TCAD software. The trade off between threshold voltage (VTH), gate length (LG) and thin oxide thickness (tox) are discussed to determine the
characteristics of the transistors. It shows that for 0.3mm (toX = 860A) PMOS transistor the value of VT H =-3.33V and 0.5 mm ( t ^ = 910A), VT H value =-4.3V. From the simulation result show for 0.1 jim (to* = 200A), VT H = - 0 . 3 1 4V and for 0 . 5 | im (400A) Vt h = -0.634V. The result shows that, with decreasing gate length and oxide thickness will produce lower value of threshold voltage. Minimum value of threshold voltage can result in a better performance of transistor. Another parameter must be taken into
consideration such as leakage current, resistivity and conductivity to get a better design of PMOS transistor in future research. |
| first_indexed | 2024-03-05T21:42:21Z |
| format | Thesis |
| id | uthm.eprints-2230 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | English English English |
| last_indexed | 2024-03-05T21:42:21Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | uthm.eprints-22302021-10-31T04:36:13Z http://eprints.uthm.edu.my/2230/ Simulation, fabrication and characterization of PMOS transistor device Yusuf, Siti Idzura TK7800-8360 Electronics In a low supply voltage CMOS technology, it is desirable to scale threshold voltage and gate length for improving circuit performance. Therefore, a project has been carried out inside KUiTTHO's microelectronic cleanroom to produce a method that has better l ow power/low voltage current concentrate on p-channel (PMOS). An experiment was also done to determine the right parameter value to b e used for fabrication process such as oxidation process thickness rate, sheet resistance and metal thickness. From the parameter value obtained, 0.3 m m and 0.5 mm PMOS transistor had been successfully produced. Fabrication simulation was performed to produce a 0.1 |am and 0.3p.m PMOS transistor by using the ISE-TCAD software. The trade off between threshold voltage (VTH), gate length (LG) and thin oxide thickness (tox) are discussed to determine the characteristics of the transistors. It shows that for 0.3mm (toX = 860A) PMOS transistor the value of VT H =-3.33V and 0.5 mm ( t ^ = 910A), VT H value =-4.3V. From the simulation result show for 0.1 jim (to* = 200A), VT H = - 0 . 3 1 4V and for 0 . 5 | im (400A) Vt h = -0.634V. The result shows that, with decreasing gate length and oxide thickness will produce lower value of threshold voltage. Minimum value of threshold voltage can result in a better performance of transistor. Another parameter must be taken into consideration such as leakage current, resistivity and conductivity to get a better design of PMOS transistor in future research. 2006-12 Thesis NonPeerReviewed text en http://eprints.uthm.edu.my/2230/1/SITI%20IDZURA%20BINTI%20YUSUF%20-%20declaration.pdf text en http://eprints.uthm.edu.my/2230/2/SITI%20IDZURA%20BINTI%20YUSUF%20-%2024p.pdf text en http://eprints.uthm.edu.my/2230/3/SITI%20IDZURA%20BINTI%20YUSUF%20-%20fulltext.pdf Yusuf, Siti Idzura (2006) Simulation, fabrication and characterization of PMOS transistor device. Masters thesis, Universiti Tun Hussein Onn Malaysia. |
| spellingShingle | TK7800-8360 Electronics Yusuf, Siti Idzura Simulation, fabrication and characterization of PMOS transistor device |
| title | Simulation, fabrication and characterization of PMOS transistor device |
| title_full | Simulation, fabrication and characterization of PMOS transistor device |
| title_fullStr | Simulation, fabrication and characterization of PMOS transistor device |
| title_full_unstemmed | Simulation, fabrication and characterization of PMOS transistor device |
| title_short | Simulation, fabrication and characterization of PMOS transistor device |
| title_sort | simulation fabrication and characterization of pmos transistor device |
| topic | TK7800-8360 Electronics |
| url | http://eprints.uthm.edu.my/2230/1/SITI%20IDZURA%20BINTI%20YUSUF%20-%20declaration.pdf http://eprints.uthm.edu.my/2230/2/SITI%20IDZURA%20BINTI%20YUSUF%20-%2024p.pdf http://eprints.uthm.edu.my/2230/3/SITI%20IDZURA%20BINTI%20YUSUF%20-%20fulltext.pdf |
| work_keys_str_mv | AT yusufsitiidzura simulationfabricationandcharacterizationofpmostransistordevice |