Light emitting diode (led) chip fabrication using low temperature processes
Commercial light emitting diode (LED) chips are fabricated using metal organic chemical vapor deposition (MOCVD) process, which require high temperature process of above 1000 degree Celsius (◦C). Therefore, alternative processes such as pulse sputtering deposition (PSD), thermal annealing and electr...
| Main Authors: | , , , |
|---|---|
| Format: | Book Section |
| Language: | English |
| Published: |
Penerbit Uthm
2019
|
| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/3581/1/c%208%20DONE.pdf |
| _version_ | 1825637103287926784 |
|---|---|
| author | Tahan, Muliana Nayan, Nafarizal Bakri, Anis Suhaili Rizan, Elfa Rizon |
| author_facet | Tahan, Muliana Nayan, Nafarizal Bakri, Anis Suhaili Rizan, Elfa Rizon |
| author_sort | Tahan, Muliana |
| collection | UTHM |
| description | Commercial light emitting diode (LED) chips are fabricated using metal organic chemical vapor deposition (MOCVD) process, which require high temperature process of above 1000 degree Celsius (◦C). Therefore, alternative processes such as pulse sputtering deposition (PSD), thermal annealing and electron beam have been investigated. Although a series of investigations have been reported on fabrication of LED chips employing various type of deposition, to our knowledge, most of these investigations are still not excluded from the high temperature process as their secondary process. Hence, this chapter reveals the investigation of LED chip fabrication at low temperature (which is below 1000 ◦C) and its possibility and reliability to emit light at wavelength of 442 nm, 460 nm and 520 nm. At this point, the use of combination of various techniques such as thermal annealing, PSD and electron beam helps to avoid expensive and high temperature techniques such as MOCVD. Development of low-cost production and commercial fabrication tools for LED and optoelectronic devices is a promising subject for future research. In addition, basic LED and device structure are also explained and illustrated in this chapter. |
| first_indexed | 2024-03-05T21:46:12Z |
| format | Book Section |
| id | uthm.eprints-3581 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | English |
| last_indexed | 2024-03-05T21:46:12Z |
| publishDate | 2019 |
| publisher | Penerbit Uthm |
| record_format | dspace |
| spelling | uthm.eprints-35812022-01-10T04:12:33Z http://eprints.uthm.edu.my/3581/ Light emitting diode (led) chip fabrication using low temperature processes Tahan, Muliana Nayan, Nafarizal Bakri, Anis Suhaili Rizan, Elfa Rizon TK7800-8360 Electronics Commercial light emitting diode (LED) chips are fabricated using metal organic chemical vapor deposition (MOCVD) process, which require high temperature process of above 1000 degree Celsius (◦C). Therefore, alternative processes such as pulse sputtering deposition (PSD), thermal annealing and electron beam have been investigated. Although a series of investigations have been reported on fabrication of LED chips employing various type of deposition, to our knowledge, most of these investigations are still not excluded from the high temperature process as their secondary process. Hence, this chapter reveals the investigation of LED chip fabrication at low temperature (which is below 1000 ◦C) and its possibility and reliability to emit light at wavelength of 442 nm, 460 nm and 520 nm. At this point, the use of combination of various techniques such as thermal annealing, PSD and electron beam helps to avoid expensive and high temperature techniques such as MOCVD. Development of low-cost production and commercial fabrication tools for LED and optoelectronic devices is a promising subject for future research. In addition, basic LED and device structure are also explained and illustrated in this chapter. Penerbit Uthm 2019 Book Section PeerReviewed text en http://eprints.uthm.edu.my/3581/1/c%208%20DONE.pdf Tahan, Muliana and Nayan, Nafarizal and Bakri, Anis Suhaili and Rizan, Elfa Rizon (2019) Light emitting diode (led) chip fabrication using low temperature processes. In: Current Advances in Microdevices and Nanotechnology. Penerbit Uthm, Uthm, pp. 149-163. ISBN 978-967-2306-25-2 |
| spellingShingle | TK7800-8360 Electronics Tahan, Muliana Nayan, Nafarizal Bakri, Anis Suhaili Rizan, Elfa Rizon Light emitting diode (led) chip fabrication using low temperature processes |
| title | Light emitting diode (led) chip fabrication using low temperature processes |
| title_full | Light emitting diode (led) chip fabrication using low temperature processes |
| title_fullStr | Light emitting diode (led) chip fabrication using low temperature processes |
| title_full_unstemmed | Light emitting diode (led) chip fabrication using low temperature processes |
| title_short | Light emitting diode (led) chip fabrication using low temperature processes |
| title_sort | light emitting diode led chip fabrication using low temperature processes |
| topic | TK7800-8360 Electronics |
| url | http://eprints.uthm.edu.my/3581/1/c%208%20DONE.pdf |
| work_keys_str_mv | AT tahanmuliana lightemittingdiodeledchipfabricationusinglowtemperatureprocesses AT nayannafarizal lightemittingdiodeledchipfabricationusinglowtemperatureprocesses AT bakrianissuhaili lightemittingdiodeledchipfabricationusinglowtemperatureprocesses AT rizanelfarizon lightemittingdiodeledchipfabricationusinglowtemperatureprocesses |