Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method
Nanostructured Zinc Oxide (ZnO) has been deposited on Silicon Dioxide (Si02) using sol-gel method. The Si02 was grown on Silicon (Si) using dry oxidation process in 1 atrn ambient. In sol-gel method. a lot of deposition parameters need to be considered to remain the uniformity v and reproduc...
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| Materiálatiipa: | Oahppočájánas |
| Giella: | English English English |
| Almmustuhtton: |
2008
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| Fáttát: | |
| Liŋkkat: | http://eprints.uthm.edu.my/7452/1/24p%20SHARMILI%20MOHAMED%20RAFI.pdf http://eprints.uthm.edu.my/7452/2/SHARMILI%20MOHAMED%20RAFI%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7452/3/SHARMILI%20MOHAMED%20RAFI%20WATERMARK.pdf |
| Čoahkkáigeassu: | Nanostructured Zinc Oxide (ZnO) has been deposited on Silicon Dioxide (Si02) using sol-gel
method. The Si02 was grown on Silicon (Si) using dry oxidation process in 1 atrn ambient. In
sol-gel method. a lot of deposition parameters need to be considered to remain the uniformity
v
and reproducibility. Any small changes in the deposition parameters will affect the surface
morphologies, electrical properties and optical properties as well. This research is done to study
the deposition parameters on the electrical properties and supported by the surface morphologies
and optical properties which have strong correlation. There are four deposition method have been
focused in this study which are the immerse time, Si02 thickness, annealing temperature and the
precursor solution concentration. The results have been characterized using scanning electron
microscope (SEM) for the structural properties, X-ray diffractometer (XRD) for the growth
orientation and IV measurement system for the electrical properties. The optical properties have
been characterized using photoluminescence and UV -VIS spectrometer. Immerse time at 3 hours
shows optimum electrical IV response. The Si02 thickness when oxidized at 5 minutes has
optimum structural, clectrical and optical propcl1ics. Annealing thc sample at 500°C has the
optimum IV response but for the optical properties, the best annealing temperature is at 550°C.
The precursor solution concentration at 0.0001 M has optimum IV response but for the optimum
optical properties, 0.01 M has the best response. At the end of this study, the optimized
deposition parameters in sol-gel method to deposit nanostrLlctured ZnO has been obtained. The
result will be a contribution for the next researcher to study other parameters using sol-gel
method. |
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