Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film
Metal oxide semiconductor material has great potential to act as window layer in p–n heterojunction solar cell thin film owing to low production cost and significant properties in photovoltaic mechanism. In this work, n-TiO2/ZnO bilayer thin film was effectively constructed by means of sol-gel spin...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Mdpi
2023
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/9306/1/J15734_07a7337393f7392db3ebeb41a54547f4.pdf |
| _version_ | 1825710739723124736 |
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| author | Mohamad Arifin, Nurliyana Mohamad, Fariza Hussin, Rosniza Mohd Ismail, Anis Zafirah Ramli, Shazleen Ahmad Ahmad, Norazlina Muhd Nor, Nik Hisyamudin Sahdan, Mohd Zainizan Mohammad Zain, Mohd Zamzuri Izaki, Masanobu |
| author_facet | Mohamad Arifin, Nurliyana Mohamad, Fariza Hussin, Rosniza Mohd Ismail, Anis Zafirah Ramli, Shazleen Ahmad Ahmad, Norazlina Muhd Nor, Nik Hisyamudin Sahdan, Mohd Zainizan Mohammad Zain, Mohd Zamzuri Izaki, Masanobu |
| author_sort | Mohamad Arifin, Nurliyana |
| collection | UTHM |
| description | Metal oxide semiconductor material has great potential to act as window layer in p–n heterojunction solar cell thin film owing to low production cost and significant properties in photovoltaic mechanism. In this work, n-TiO2/ZnO bilayer thin film was effectively constructed by means of sol-gel spin coating technique in an effort to diminish the electron-hole recombination rate from single-layered thin film. Annealing time is one of the important parameters in the fabrication process and was varied to study the impact of annealing treatment towards the thin film characteristics as window layer. It was found that the optimum parameter for the n-TiO2/ZnO bilayer was 500 ◦C with an annealing time of 2 h. High crystallinity of the n-(101)-TiO2/(002)-ZnO bilayer thin film was obtained, which consists of anatase and a hexagonal wurtzite structure, respectively. Orientation of (002)-ZnO is essential for deposition with the (111) Cu2O-absorbing layer due to a low different lattice mismatch between these two interfaces. The homogenous morphology of n-TiO2/ZnO bilayer was observed with a compact and dense layer. The improvement of transmittance has also been achieved in a range of 60%–80%, which indicated that the incident light can penetrate throughout the thin film directly. In addition, a p-Cu2O absorbing layer was successfully fabricated on top
of n-TiO2/ZnO bilayer thin film to form a p-n junction in order to visualize significant electrical rectification properties. The existence of p-Cu2O was confirmed by a (111)-peak orientation and triangular shape in structural and morphological properties, respectively. |
| first_indexed | 2024-03-05T22:02:12Z |
| format | Article |
| id | uthm.eprints-9306 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | English |
| last_indexed | 2024-03-05T22:02:12Z |
| publishDate | 2023 |
| publisher | Mdpi |
| record_format | dspace |
| spelling | uthm.eprints-93062023-07-17T07:48:53Z http://eprints.uthm.edu.my/9306/ Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film Mohamad Arifin, Nurliyana Mohamad, Fariza Hussin, Rosniza Mohd Ismail, Anis Zafirah Ramli, Shazleen Ahmad Ahmad, Norazlina Muhd Nor, Nik Hisyamudin Sahdan, Mohd Zainizan Mohammad Zain, Mohd Zamzuri Izaki, Masanobu T Technology (General) Metal oxide semiconductor material has great potential to act as window layer in p–n heterojunction solar cell thin film owing to low production cost and significant properties in photovoltaic mechanism. In this work, n-TiO2/ZnO bilayer thin film was effectively constructed by means of sol-gel spin coating technique in an effort to diminish the electron-hole recombination rate from single-layered thin film. Annealing time is one of the important parameters in the fabrication process and was varied to study the impact of annealing treatment towards the thin film characteristics as window layer. It was found that the optimum parameter for the n-TiO2/ZnO bilayer was 500 ◦C with an annealing time of 2 h. High crystallinity of the n-(101)-TiO2/(002)-ZnO bilayer thin film was obtained, which consists of anatase and a hexagonal wurtzite structure, respectively. Orientation of (002)-ZnO is essential for deposition with the (111) Cu2O-absorbing layer due to a low different lattice mismatch between these two interfaces. The homogenous morphology of n-TiO2/ZnO bilayer was observed with a compact and dense layer. The improvement of transmittance has also been achieved in a range of 60%–80%, which indicated that the incident light can penetrate throughout the thin film directly. In addition, a p-Cu2O absorbing layer was successfully fabricated on top of n-TiO2/ZnO bilayer thin film to form a p-n junction in order to visualize significant electrical rectification properties. The existence of p-Cu2O was confirmed by a (111)-peak orientation and triangular shape in structural and morphological properties, respectively. Mdpi 2023 Article PeerReviewed text en http://eprints.uthm.edu.my/9306/1/J15734_07a7337393f7392db3ebeb41a54547f4.pdf Mohamad Arifin, Nurliyana and Mohamad, Fariza and Hussin, Rosniza and Mohd Ismail, Anis Zafirah and Ramli, Shazleen Ahmad and Ahmad, Norazlina and Muhd Nor, Nik Hisyamudin and Sahdan, Mohd Zainizan and Mohammad Zain, Mohd Zamzuri and Izaki, Masanobu (2023) Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film. Coatings, 13 (206). pp. 1-13. https://doi.org/10.3390/coatings13010206 |
| spellingShingle | T Technology (General) Mohamad Arifin, Nurliyana Mohamad, Fariza Hussin, Rosniza Mohd Ismail, Anis Zafirah Ramli, Shazleen Ahmad Ahmad, Norazlina Muhd Nor, Nik Hisyamudin Sahdan, Mohd Zainizan Mohammad Zain, Mohd Zamzuri Izaki, Masanobu Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film |
| title | Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin
Film Deposition as Window Layer for p-Cu2O-Based
Heterostructure Thin Film |
| title_full | Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin
Film Deposition as Window Layer for p-Cu2O-Based
Heterostructure Thin Film |
| title_fullStr | Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin
Film Deposition as Window Layer for p-Cu2O-Based
Heterostructure Thin Film |
| title_full_unstemmed | Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin
Film Deposition as Window Layer for p-Cu2O-Based
Heterostructure Thin Film |
| title_short | Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin
Film Deposition as Window Layer for p-Cu2O-Based
Heterostructure Thin Film |
| title_sort | annealing treatment on homogenous n tio2 zno bilayer thin film deposition as window layer for p cu2o based heterostructure thin film |
| topic | T Technology (General) |
| url | http://eprints.uthm.edu.my/9306/1/J15734_07a7337393f7392db3ebeb41a54547f4.pdf |
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