Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model
Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than- Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is for...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Public Library of Science
2022
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/103651/1/TanLoongPeng2022_DevicePerformancesAnalysisofPType.pdf |
| _version_ | 1796867502316191744 |
|---|---|
| author | Chuan, Mu Wen Riyadi, Munawar Agus Hamzah, Afiq Alias, Nurul Ezaila Mohamed Sultan, Suhana Lim, Cheng Siong Tan, Michael Loong Peng |
| author_facet | Chuan, Mu Wen Riyadi, Munawar Agus Hamzah, Afiq Alias, Nurul Ezaila Mohamed Sultan, Suhana Lim, Cheng Siong Tan, Michael Loong Peng |
| author_sort | Chuan, Mu Wen |
| collection | ePrints |
| description | Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than- Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed ptype silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work. |
| first_indexed | 2024-03-05T21:28:13Z |
| format | Article |
| id | utm.eprints-103651 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T21:28:13Z |
| publishDate | 2022 |
| publisher | Public Library of Science |
| record_format | dspace |
| spelling | utm.eprints-1036512023-11-22T00:18:50Z http://eprints.utm.my/103651/ Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model Chuan, Mu Wen Riyadi, Munawar Agus Hamzah, Afiq Alias, Nurul Ezaila Mohamed Sultan, Suhana Lim, Cheng Siong Tan, Michael Loong Peng TK Electrical engineering. Electronics Nuclear engineering Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than- Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed ptype silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work. Public Library of Science 2022-03 Article PeerReviewed application/pdf en http://eprints.utm.my/103651/1/TanLoongPeng2022_DevicePerformancesAnalysisofPType.pdf Chuan, Mu Wen and Riyadi, Munawar Agus and Hamzah, Afiq and Alias, Nurul Ezaila and Mohamed Sultan, Suhana and Lim, Cheng Siong and Tan, Michael Loong Peng (2022) Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model. PLoS ONE, 17 (3). pp. 1-11. ISSN 1932-6203 http://dx.doi.org/10.1371/journal.pone.0264483 DOI:10.1371/journal.pone.0264483 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Chuan, Mu Wen Riyadi, Munawar Agus Hamzah, Afiq Alias, Nurul Ezaila Mohamed Sultan, Suhana Lim, Cheng Siong Tan, Michael Loong Peng Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model |
| title | Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model |
| title_full | Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model |
| title_fullStr | Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model |
| title_full_unstemmed | Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model |
| title_short | Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model |
| title_sort | device performances analysis of p type doped silicene based field effect transistor using spice compatible model |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/103651/1/TanLoongPeng2022_DevicePerformancesAnalysisofPType.pdf |
| work_keys_str_mv | AT chuanmuwen deviceperformancesanalysisofptypedopedsilicenebasedfieldeffecttransistorusingspicecompatiblemodel AT riyadimunawaragus deviceperformancesanalysisofptypedopedsilicenebasedfieldeffecttransistorusingspicecompatiblemodel AT hamzahafiq deviceperformancesanalysisofptypedopedsilicenebasedfieldeffecttransistorusingspicecompatiblemodel AT aliasnurulezaila deviceperformancesanalysisofptypedopedsilicenebasedfieldeffecttransistorusingspicecompatiblemodel AT mohamedsultansuhana deviceperformancesanalysisofptypedopedsilicenebasedfieldeffecttransistorusingspicecompatiblemodel AT limchengsiong deviceperformancesanalysisofptypedopedsilicenebasedfieldeffecttransistorusingspicecompatiblemodel AT tanmichaelloongpeng deviceperformancesanalysisofptypedopedsilicenebasedfieldeffecttransistorusingspicecompatiblemodel |