The effects of gate oxide short in 6-transistors SRAM cell
The effects of gate oxide short (GOS) in a single 6-MOS transistors SRAM cell are studied in this work, through SPICE simulation. Both uni-directional split model and bi-dimensional lumped-transistors model are used to model the GOS in NMOS for comparison. It is assumed that only one NMOS is defecti...
| Main Authors: | , , |
|---|---|
| Format: | Book Section |
| Published: |
IEEE
2004
|
| Subjects: |
| _version_ | 1796855018062610432 |
|---|---|
| author | A'Ain, Abu Khari Kian, Sin Sim Cheow, Kwee Siong |
| author_facet | A'Ain, Abu Khari Kian, Sin Sim Cheow, Kwee Siong |
| author_sort | A'Ain, Abu Khari |
| collection | ePrints |
| description | The effects of gate oxide short (GOS) in a single 6-MOS transistors SRAM cell are studied in this work, through SPICE simulation. Both uni-directional split model and bi-dimensional lumped-transistors model are used to model the GOS in NMOS for comparison. It is assumed that only one NMOS is defective at a time. TSMC 0.18µm process parameters are used in the SPICE simulations. Interesting findings and results showed that GOS may leave catastrophic impacts on SRAM operations. |
| first_indexed | 2024-03-05T18:22:28Z |
| format | Book Section |
| id | utm.eprints-12127 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:22:28Z |
| publishDate | 2004 |
| publisher | IEEE |
| record_format | dspace |
| spelling | utm.eprints-121272017-10-02T06:55:41Z http://eprints.utm.my/12127/ The effects of gate oxide short in 6-transistors SRAM cell A'Ain, Abu Khari Kian, Sin Sim Cheow, Kwee Siong TK Electrical engineering. Electronics Nuclear engineering The effects of gate oxide short (GOS) in a single 6-MOS transistors SRAM cell are studied in this work, through SPICE simulation. Both uni-directional split model and bi-dimensional lumped-transistors model are used to model the GOS in NMOS for comparison. It is assumed that only one NMOS is defective at a time. TSMC 0.18µm process parameters are used in the SPICE simulations. Interesting findings and results showed that GOS may leave catastrophic impacts on SRAM operations. IEEE 2004-12-04 Book Section PeerReviewed A'Ain, Abu Khari and Kian, Sin Sim and Cheow, Kwee Siong (2004) The effects of gate oxide short in 6-transistors SRAM cell. In: Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. IEEE, USA, pp. 122-126. ISBN 978-078038658-7 http://dx.doi.org/10.1109/SMELEC.2004.1620852 doi:10.1109/SMELEC.2004.1620852 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering A'Ain, Abu Khari Kian, Sin Sim Cheow, Kwee Siong The effects of gate oxide short in 6-transistors SRAM cell |
| title | The effects of gate oxide short in 6-transistors SRAM cell |
| title_full | The effects of gate oxide short in 6-transistors SRAM cell |
| title_fullStr | The effects of gate oxide short in 6-transistors SRAM cell |
| title_full_unstemmed | The effects of gate oxide short in 6-transistors SRAM cell |
| title_short | The effects of gate oxide short in 6-transistors SRAM cell |
| title_sort | effects of gate oxide short in 6 transistors sram cell |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| work_keys_str_mv | AT aainabukhari theeffectsofgateoxideshortin6transistorssramcell AT kiansinsim theeffectsofgateoxideshortin6transistorssramcell AT cheowkweesiong theeffectsofgateoxideshortin6transistorssramcell AT aainabukhari effectsofgateoxideshortin6transistorssramcell AT kiansinsim effectsofgateoxideshortin6transistorssramcell AT cheowkweesiong effectsofgateoxideshortin6transistorssramcell |