Mobility enhancement of nanoscale biaxial strained silicon metal-oxide semiconductor field effect transistor
Scaling down of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) devices has been a driving force in IC industry due to high speed and low power requirements. The recent MOSFET devices have been scaled down to 50nm gate lengths where the gate oxide thickness has become thin enough to suppr...
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | http://eprints.utm.my/12363/1/WongYahJinMFKE2009.pdf |