Invited paper: modeling of nanoscale MOSFET using MATLAB
Quantum and high-field effects present in a nanoscale MOSFET are modeled and data processed using MATLAB. The drift response to the electric field is modeled after the intrinsic velocity that is shown to be the ultimate limit to the saturation velocity in a very high electric field. The ballistic in...
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| Format: | Book Section |
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Institute of Electrical and Electronics Engineers
2009
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| _version_ | 1796855156973764608 |
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| author | Arora, Vijay K. |
| author_facet | Arora, Vijay K. |
| author_sort | Arora, Vijay K. |
| collection | ePrints |
| description | Quantum and high-field effects present in a nanoscale MOSFET are modeled and data processed using MATLAB. The drift response to the electric field is modeled after the intrinsic velocity that is shown to be the ultimate limit to the saturation velocity in a very high electric field. The ballistic intrinsic velocity arises from the fact that randomly oriented velocity vectors in zero electric field are streamlined and become unidirectional. The presence of a quantum emission lowers the saturation velocity. The drain carrier velocity is revealed to be smaller than the saturation velocity due to the presence of the finite electric field at the drain of a MOSFET. The velocity so obtained is considered in modeling the current-voltage characteristics of a MOSFET channel in the inversion regime and excellent agreement is obtained with the experimental data on an 80-nm channel. |
| first_indexed | 2024-03-05T18:24:31Z |
| format | Book Section |
| id | utm.eprints-12910 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:24:31Z |
| publishDate | 2009 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | utm.eprints-129102011-07-05T10:06:42Z http://eprints.utm.my/12910/ Invited paper: modeling of nanoscale MOSFET using MATLAB Arora, Vijay K. TK Electrical engineering. Electronics Nuclear engineering Quantum and high-field effects present in a nanoscale MOSFET are modeled and data processed using MATLAB. The drift response to the electric field is modeled after the intrinsic velocity that is shown to be the ultimate limit to the saturation velocity in a very high electric field. The ballistic intrinsic velocity arises from the fact that randomly oriented velocity vectors in zero electric field are streamlined and become unidirectional. The presence of a quantum emission lowers the saturation velocity. The drain carrier velocity is revealed to be smaller than the saturation velocity due to the presence of the finite electric field at the drain of a MOSFET. The velocity so obtained is considered in modeling the current-voltage characteristics of a MOSFET channel in the inversion regime and excellent agreement is obtained with the experimental data on an 80-nm channel. Institute of Electrical and Electronics Engineers 2009 Book Section PeerReviewed Arora, Vijay K. (2009) Invited paper: modeling of nanoscale MOSFET using MATLAB. In: Proceedings - 2009 3rd Asia International Conference on Modelling and Simulation, AMS 2009. Institute of Electrical and Electronics Engineers, New York, pp. 739-744. ISBN 978-076953648-4 http://dx.doi.org/10.1109/AMS.2009.21 doi:10.1109/AMS.2009.21 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Arora, Vijay K. Invited paper: modeling of nanoscale MOSFET using MATLAB |
| title | Invited paper: modeling of nanoscale MOSFET using MATLAB |
| title_full | Invited paper: modeling of nanoscale MOSFET using MATLAB |
| title_fullStr | Invited paper: modeling of nanoscale MOSFET using MATLAB |
| title_full_unstemmed | Invited paper: modeling of nanoscale MOSFET using MATLAB |
| title_short | Invited paper: modeling of nanoscale MOSFET using MATLAB |
| title_sort | invited paper modeling of nanoscale mosfet using matlab |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| work_keys_str_mv | AT aroravijayk invitedpapermodelingofnanoscalemosfetusingmatlab |