The micro-circuit engineering in the nonohmic domain
Considering the breakdown of Ohm's law in microcircuits, the direct and differential (incremental) resistance is shown to rise dramatically in the regime where applied voltage V triggering the nonohmic behavior is larger than the critical voltage V=(Vco/lo) L, where Vt) is the thermal voltage,...
Main Authors: | Tan, Michael L. P., Arora , Vijay K. |
---|---|
Format: | Book Section |
Published: |
Institute of Electrical and Electronics Engineers
2009
|
Subjects: |
Similar Items
-
Micro-circuit engineering in the nonohmic domain /
by: Vijay K. Arora, et al.
Published: (2008) -
The micro-circuit engineering in the nonohmic domain /
by: Loong, Michael Peng Tan, author, et al.
Published: (2009) -
Resistance blow-up effect in micro-circuit engineering
by: Tan, Michael Loong Peng, et al.
Published: (2010) -
Nano-physics of transient phenomenon in semiconducting devices and circuits
by: Saad, Ismail, et al.
Published: (2007) -
High-field quantum transport in nanostructured devices and integrated circuits
by: K. Arora, Vijay
Published: (2008)