CMOS active inductor linearity improvement using feed-forward current source technique
MOSFET drain current second-order nonlinearity has a significant impact on the linearity of current regulated CMOS active inductors. It tends to compress MOSFET transconductance $(gm) by generating excess dc current (IEX) in the channel, which is a function of incoming input signal amplitude. This g...
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| Format: | Article |
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Institute of Electrical and Electronics Engineers
2009
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| _version_ | 1796855214531149824 |
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| author | Chun-, Lee Ler A'ain, A. Kordesch, A. V. |
| author_facet | Chun-, Lee Ler A'ain, A. Kordesch, A. V. |
| author_sort | Chun-, Lee Ler |
| collection | ePrints |
| description | MOSFET drain current second-order nonlinearity has a significant impact on the linearity of current regulated CMOS active inductors. It tends to compress MOSFET transconductance $(gm) by generating excess dc current (IEX) in the channel, which is a function of incoming input signal amplitude. This generated excess dc current can change the original dc operating point of the current regulated CMOS active inductor, and thus, influence the inductance. Unfortunately, MOSFET drain current second-order nonlinearity contributes more to MOSFET gm compression than MOSFET drain current third-order nonlinearity. In this paper, a new technique known as eed-forward current source (FFCS) has been proposed to improve the linearity of the active inductor. The proposed FFCS technique makes use of the second-order nonlinear property of a MOSFET that generates IEX when an input ac signal is applied. The generated IEX is then fed-forward to the current source of the active inductor to drain out the IEX in the active inductor. This prevents the dc operating point from shifting and improves its inductance linearity. Single-ended and differential active inductors with the proposed FFCS circuit have been fabricated using Silterra's CMOS 0.18-µm technology to verify the proposed technique. |
| first_indexed | 2024-03-05T18:25:22Z |
| format | Article |
| id | utm.eprints-13261 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:25:22Z |
| publishDate | 2009 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | utm.eprints-132612011-07-29T01:46:08Z http://eprints.utm.my/13261/ CMOS active inductor linearity improvement using feed-forward current source technique Chun-, Lee Ler A'ain, A. Kordesch, A. V. TK Electrical engineering. Electronics Nuclear engineering MOSFET drain current second-order nonlinearity has a significant impact on the linearity of current regulated CMOS active inductors. It tends to compress MOSFET transconductance $(gm) by generating excess dc current (IEX) in the channel, which is a function of incoming input signal amplitude. This generated excess dc current can change the original dc operating point of the current regulated CMOS active inductor, and thus, influence the inductance. Unfortunately, MOSFET drain current second-order nonlinearity contributes more to MOSFET gm compression than MOSFET drain current third-order nonlinearity. In this paper, a new technique known as eed-forward current source (FFCS) has been proposed to improve the linearity of the active inductor. The proposed FFCS technique makes use of the second-order nonlinear property of a MOSFET that generates IEX when an input ac signal is applied. The generated IEX is then fed-forward to the current source of the active inductor to drain out the IEX in the active inductor. This prevents the dc operating point from shifting and improves its inductance linearity. Single-ended and differential active inductors with the proposed FFCS circuit have been fabricated using Silterra's CMOS 0.18-µm technology to verify the proposed technique. Institute of Electrical and Electronics Engineers 2009 Article PeerReviewed Chun-, Lee Ler and A'ain, A. and Kordesch, A. V. (2009) CMOS active inductor linearity improvement using feed-forward current source technique. IEEE Transactions on Microwave Theory and Techniques, 57 (8). pp. 1915-1924. ISSN 0018-9480 http://dx.doi.org/10.1109/TMTT.2009.2025426 doi:10.1109/TMTT.2009.2025426 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Chun-, Lee Ler A'ain, A. Kordesch, A. V. CMOS active inductor linearity improvement using feed-forward current source technique |
| title | CMOS active inductor linearity improvement using feed-forward current source technique |
| title_full | CMOS active inductor linearity improvement using feed-forward current source technique |
| title_fullStr | CMOS active inductor linearity improvement using feed-forward current source technique |
| title_full_unstemmed | CMOS active inductor linearity improvement using feed-forward current source technique |
| title_short | CMOS active inductor linearity improvement using feed-forward current source technique |
| title_sort | cmos active inductor linearity improvement using feed forward current source technique |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| work_keys_str_mv | AT chunleeler cmosactiveinductorlinearityimprovementusingfeedforwardcurrentsourcetechnique AT aaina cmosactiveinductorlinearityimprovementusingfeedforwardcurrentsourcetechnique AT kordeschav cmosactiveinductorlinearityimprovementusingfeedforwardcurrentsourcetechnique |