Gallium arsenide nanowires formed by au-assisted metal organic chemical vapor deposition: effect of growth temperature
We have investigated the growth of gallium arsenide (GaAs) nanowires as a function of temperatures in metal organic chemical vapor deposition (MOCVD) to establish the mechanisms that govern wire growth and to optimize growth conditions. The growth follows the vapor-liquid-solid method by applying na...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Canadian Center of Science and Education
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/13708/1/RosnitaMuhammad2009_GalliumArsenideNanowiresFormed.pdf http://eprints.utm.my/13708/2/2816 |