Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET
NMOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.
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| Format: | Conference or Workshop Item |
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2007
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| _version_ | 1796855388843278336 |
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| author | Saad, Ismail Ismail, Razali |
| author_facet | Saad, Ismail Ismail, Razali |
| author_sort | Saad, Ismail |
| collection | ePrints |
| description | NMOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. |
| first_indexed | 2024-03-05T18:27:50Z |
| format | Conference or Workshop Item |
| id | utm.eprints-14418 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:27:50Z |
| publishDate | 2007 |
| record_format | dspace |
| spelling | utm.eprints-144182017-08-03T00:54:25Z http://eprints.utm.my/14418/ Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET Saad, Ismail Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering NMOSFET is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. 2007 Conference or Workshop Item PeerReviewed Saad, Ismail and Ismail, Razali (2007) Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET. In: IEEE Regional Symposium on Microelectronics (RSM2007), 2007, Penang. |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Saad, Ismail Ismail, Razali Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET |
| title | Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET |
| title_full | Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET |
| title_fullStr | Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET |
| title_full_unstemmed | Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET |
| title_short | Simulation analysis on the impact of oblique rotating ion implantation (Ori) in fabricating novel structure of vertical NMOSFET |
| title_sort | simulation analysis on the impact of oblique rotating ion implantation ori in fabricating novel structure of vertical nmosfet |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| work_keys_str_mv | AT saadismail simulationanalysisontheimpactofobliquerotatingionimplantationoriinfabricatingnovelstructureofverticalnmosfet AT ismailrazali simulationanalysisontheimpactofobliquerotatingionimplantationoriinfabricatingnovelstructureofverticalnmosfet |