Design and simulation analysis of nanoscale vertical MOSFET technology
Design consideration of vertical MOSFET with double gate structure on each side of insulating pillar for nanodevice applications is presented. The body doping effect on vertical channel for channel length, Lg = 50 nm and analyzing its effect towards such small devices was successfully performed. The...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2009
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| Subjects: |