A study on characterization of gate oxide shorts using non-split model
The integrity of gate oxide shorts (GOS) model is a key factor as quality and reliability indicator of CMOS. Gate oxide defects in MOS transistors can be considered as the layout and technology dependent failures for which logic fault models are not always available, requiring electrical models to s...
| Main Authors: | , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2003
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| 在線閱讀: | http://eprints.utm.my/1931/1/Abu2003_AStudyOnCharacterizationOfOxideShortsUsing.pdf |
| _version_ | 1825909151567446016 |
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| author | Chua, Yong Moh A'ain, Abu Khari |
| author_facet | Chua, Yong Moh A'ain, Abu Khari |
| author_sort | Chua, Yong Moh |
| collection | ePrints |
| description | The integrity of gate oxide shorts (GOS) model is a key factor as quality and reliability indicator of CMOS. Gate oxide defects in MOS transistors can be considered as the layout and technology dependent failures for which logic fault models are not always available, requiring electrical models to simulate the defect characteristics. Previously the GOS have been modeled with split transistors technique using two minor transistors and lumped elements. However, it is problematic to study minimum size transistors affected by GOS failures using the existing unidirectional split model as the channel length is designed at minimum size in particular technology process. This paper presents a study to compare and correlate between split model and non-split model of GOS. |
| first_indexed | 2024-03-05T17:57:55Z |
| format | Article |
| id | utm.eprints-1931 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T17:57:55Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | utm.eprints-19312011-05-11T01:47:15Z http://eprints.utm.my/1931/ A study on characterization of gate oxide shorts using non-split model Chua, Yong Moh A'ain, Abu Khari TK Electrical engineering. Electronics Nuclear engineering The integrity of gate oxide shorts (GOS) model is a key factor as quality and reliability indicator of CMOS. Gate oxide defects in MOS transistors can be considered as the layout and technology dependent failures for which logic fault models are not always available, requiring electrical models to simulate the defect characteristics. Previously the GOS have been modeled with split transistors technique using two minor transistors and lumped elements. However, it is problematic to study minimum size transistors affected by GOS failures using the existing unidirectional split model as the channel length is designed at minimum size in particular technology process. This paper presents a study to compare and correlate between split model and non-split model of GOS. 2003-08-25 Article PeerReviewed application/pdf en http://eprints.utm.my/1931/1/Abu2003_AStudyOnCharacterizationOfOxideShortsUsing.pdf Chua, Yong Moh and A'ain, Abu Khari (2003) A study on characterization of gate oxide shorts using non-split model. Student Conference on Research and Development (SCOReD) 2003 Proceedings, Putra,jaya, Malaysia . pp. 25-26. |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Chua, Yong Moh A'ain, Abu Khari A study on characterization of gate oxide shorts using non-split model |
| title | A study on characterization of gate oxide shorts using non-split model |
| title_full | A study on characterization of gate oxide shorts using non-split model |
| title_fullStr | A study on characterization of gate oxide shorts using non-split model |
| title_full_unstemmed | A study on characterization of gate oxide shorts using non-split model |
| title_short | A study on characterization of gate oxide shorts using non-split model |
| title_sort | study on characterization of gate oxide shorts using non split model |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/1931/1/Abu2003_AStudyOnCharacterizationOfOxideShortsUsing.pdf |
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