A study on characterization of gate oxide shorts using non-split model
The integrity of gate oxide shorts (GOS) model is a key factor as quality and reliability indicator of CMOS. Gate oxide defects in MOS transistors can be considered as the layout and technology dependent failures for which logic fault models are not always available, requiring electrical models to s...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
2003
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| Subjects: | |
| Online Access: | http://eprints.utm.my/1931/1/Abu2003_AStudyOnCharacterizationOfOxideShortsUsing.pdf |