Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection
A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices...
| Main Authors: | , , , , , |
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| Format: | Article |
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Elsevier Ltd.
2010
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| _version_ | 1796855973900451840 |
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| author | Mustafaa, Farahiyah Parimona, Norfarariyanti Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Abdul Rahman, Abdul Rahim Osman, Mohd. Nizam |
| author_facet | Mustafaa, Farahiyah Parimona, Norfarariyanti Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Abdul Rahman, Abdul Rahim Osman, Mohd. Nizam |
| author_sort | Mustafaa, Farahiyah |
| collection | ePrints |
| description | A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices had rectifying properties with a barrier height of 0.5289–0.5468 eV. The fabricated Schottky diodes detected RF signals well and their cut-off frequencies up to 20 GHz were estimated in direct injection experiments. To achieve a high cut-off frequency, a smaller Schottky contact area is required. The feasibility of direct integration with the planar dipole antenna via a coplanar waveguide transmission line without insertion of matching circuits was discussed. A higher cut-off frequency can also be achieved by reducing the length of the coplanar waveguide transmission line. These preliminary results represent a breakthrough as regards direct on-chip integration technology, towards the realization of a ubiquitous network society. |
| first_indexed | 2024-03-05T18:36:32Z |
| format | Article |
| id | utm.eprints-22942 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:36:32Z |
| publishDate | 2010 |
| publisher | Elsevier Ltd. |
| record_format | dspace |
| spelling | utm.eprints-229422017-05-27T10:16:02Z http://eprints.utm.my/22942/ Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection Mustafaa, Farahiyah Parimona, Norfarariyanti Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Abdul Rahman, Abdul Rahim Osman, Mohd. Nizam Unspecified A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices had rectifying properties with a barrier height of 0.5289–0.5468 eV. The fabricated Schottky diodes detected RF signals well and their cut-off frequencies up to 20 GHz were estimated in direct injection experiments. To achieve a high cut-off frequency, a smaller Schottky contact area is required. The feasibility of direct integration with the planar dipole antenna via a coplanar waveguide transmission line without insertion of matching circuits was discussed. A higher cut-off frequency can also be achieved by reducing the length of the coplanar waveguide transmission line. These preliminary results represent a breakthrough as regards direct on-chip integration technology, towards the realization of a ubiquitous network society. Elsevier Ltd. 2010-02 Article PeerReviewed Mustafaa, Farahiyah and Parimona, Norfarariyanti and Hashim, Abdul Manaf and Abd. Rahman, Shaharin Fadzli and Abdul Rahman, Abdul Rahim and Osman, Mohd. Nizam (2010) Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection. Superlattices and Microstructures, 47 (2). pp. 274-287. ISSN 0749-6036 http://dx.doi.org/10.1016/j.spmi.2009.10.011 DOI: 10.1016/j.spmi.2009.10.011 |
| spellingShingle | Unspecified Mustafaa, Farahiyah Parimona, Norfarariyanti Hashim, Abdul Manaf Abd. Rahman, Shaharin Fadzli Abdul Rahman, Abdul Rahim Osman, Mohd. Nizam Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection |
| title | Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection
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| title_full | Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection
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| title_fullStr | Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection
|
| title_full_unstemmed | Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection
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| title_short | Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection
|
| title_sort | design fabrication and characterization of a schottky diode on an algaas gaas hemt structure for on chip rf power detection |
| topic | Unspecified |
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