Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ω p , lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz osc...

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Main Authors: Hashim, Abdul Manaf, Kasai, Seiya, Alias, Qairul Izwan, Hasegawa, Hideki
Format: Article
Published: 2010
Subjects:
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author Hashim, Abdul Manaf
Kasai, Seiya
Alias, Qairul Izwan
Hasegawa, Hideki
author_facet Hashim, Abdul Manaf
Kasai, Seiya
Alias, Qairul Izwan
Hasegawa, Hideki
author_sort Hashim, Abdul Manaf
collection ePrints
description Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ω p , lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short‐channel High‐Electron‐Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.
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spelling utm.eprints-259472018-03-22T10:53:53Z http://eprints.utm.my/25947/ Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction Hashim, Abdul Manaf Kasai, Seiya Alias, Qairul Izwan Hasegawa, Hideki Q Science (General) Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ω p , lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short‐channel High‐Electron‐Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results. 2010 Article PeerReviewed Hashim, Abdul Manaf and Kasai, Seiya and Alias, Qairul Izwan and Hasegawa, Hideki (2010) Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction. American Institute of Physics Conf. Series . https://www.researchgate.net/publication/229057220_Harmonic_responses_in_2DEG_AlGaAsGaAs_HEMT_devices_due_to_plasma_wave_interaction
spellingShingle Q Science (General)
Hashim, Abdul Manaf
Kasai, Seiya
Alias, Qairul Izwan
Hasegawa, Hideki
Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction
title Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction
title_full Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction
title_fullStr Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction
title_full_unstemmed Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction
title_short Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction
title_sort harmonic responses in 2 d algaas gaas hemt devices due to plasma wave interaction
topic Q Science (General)
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AT kasaiseiya harmonicresponsesin2dalgaasgaashemtdevicesduetoplasmawaveinteraction
AT aliasqairulizwan harmonicresponsesin2dalgaasgaashemtdevicesduetoplasmawaveinteraction
AT hasegawahideki harmonicresponsesin2dalgaasgaashemtdevicesduetoplasmawaveinteraction