SnS thin films prepared by encapsulated sulfurization
Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and anneale...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Persatuan Sains & Teknologi Keadaan Pepejal Malaysia
1996
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| Subjects: | |
| Online Access: | http://eprints.utm.my/2867/1/SnS_thin_films_prepared_by_encapsulated_sulfurization_V6.pdf |
| Summary: | Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and annealed in argon gas at temperatures between 260-450 oC for three hours to allow the formation of SnS thin films by chemical reaction which took place in the Sn/S bilayer. In the early stage (260 oC) Sn was sulfurized between 300-400 oC changed the process rapidly and dominantly into SnS with improved crystallinity. The measured resistivities were found to be between 0.65-2.92 Sm-1 over the range of substrate temperature concerned. |
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