SnS thin films prepared by encapsulated sulfurization
Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and anneale...
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| Format: | Article |
| Language: | English |
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Persatuan Sains & Teknologi Keadaan Pepejal Malaysia
1996
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| Online Access: | http://eprints.utm.my/2867/1/SnS_thin_films_prepared_by_encapsulated_sulfurization_V6.pdf |
| _version_ | 1825909302257254400 |
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| author | Sakrani, Samsudi D. Hutagalung, Sabar Wahab, Yusof Moin, Mastura |
| author_facet | Sakrani, Samsudi D. Hutagalung, Sabar Wahab, Yusof Moin, Mastura |
| author_sort | Sakrani, Samsudi |
| collection | ePrints |
| description | Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and annealed in argon gas at temperatures between 260-450 oC for three hours to allow the formation of SnS thin films by chemical reaction which took place in the Sn/S bilayer. In the early stage (260 oC) Sn was sulfurized between 300-400 oC changed the process rapidly and dominantly into SnS with improved crystallinity. The measured resistivities were found to be between 0.65-2.92 Sm-1 over the range of substrate temperature concerned. |
| first_indexed | 2024-03-05T18:00:07Z |
| format | Article |
| id | utm.eprints-2867 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T18:00:07Z |
| publishDate | 1996 |
| publisher | Persatuan Sains & Teknologi Keadaan Pepejal Malaysia |
| record_format | dspace |
| spelling | utm.eprints-28672010-06-01T03:05:46Z http://eprints.utm.my/2867/ SnS thin films prepared by encapsulated sulfurization Sakrani, Samsudi D. Hutagalung, Sabar Wahab, Yusof Moin, Mastura QC Physics Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and annealed in argon gas at temperatures between 260-450 oC for three hours to allow the formation of SnS thin films by chemical reaction which took place in the Sn/S bilayer. In the early stage (260 oC) Sn was sulfurized between 300-400 oC changed the process rapidly and dominantly into SnS with improved crystallinity. The measured resistivities were found to be between 0.65-2.92 Sm-1 over the range of substrate temperature concerned. Persatuan Sains & Teknologi Keadaan Pepejal Malaysia 1996 Article PeerReviewed application/pdf en http://eprints.utm.my/2867/1/SnS_thin_films_prepared_by_encapsulated_sulfurization_V6.pdf Sakrani, Samsudi and D. Hutagalung, Sabar and Wahab, Yusof and Moin, Mastura (1996) SnS thin films prepared by encapsulated sulfurization. Buletin of Malaysian Solid State Science & Technology, 6 (2). pp. 43-50. ISSN 0128-5637 |
| spellingShingle | QC Physics Sakrani, Samsudi D. Hutagalung, Sabar Wahab, Yusof Moin, Mastura SnS thin films prepared by encapsulated sulfurization |
| title | SnS thin films prepared by encapsulated sulfurization |
| title_full | SnS thin films prepared by encapsulated sulfurization |
| title_fullStr | SnS thin films prepared by encapsulated sulfurization |
| title_full_unstemmed | SnS thin films prepared by encapsulated sulfurization |
| title_short | SnS thin films prepared by encapsulated sulfurization |
| title_sort | sns thin films prepared by encapsulated sulfurization |
| topic | QC Physics |
| url | http://eprints.utm.my/2867/1/SnS_thin_films_prepared_by_encapsulated_sulfurization_V6.pdf |
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