Investigation of optical effects in silicon quantum dots by using an empirical pseudopotential method
A computer simulation using a pseudopotential approach has been carried out to investigate the band gap as a function of the size and the shape of small silicon (Si) dots having 3 to 44 atoms per dot with and without surface passivation. We used an empirical pseudo-potential Hamiltonian, a plane-wav...
Main Authors: | Ghoshal, S. K., Sahar, Md. Rahim, Rohani, Md. Supar |
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Format: | Article |
Published: |
Korean Physical Society
2011
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Subjects: |
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