Single wall carbon nanotube field effect transistor model
The low-energy-limit band structure of carbon nanotubes (CNTs) indicates parabolic behavior. However it is not parabolic in other parts of the band energy. Based on the confinement effect we present an analytical model that captures the essence of the physical processes in a carbon nanotube field ef...
| Main Authors: | , , , |
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| Format: | Article |
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American Scientific Publishers
2011
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| _version_ | 1796856533393342464 |
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| author | Ahmadi, Mohammad Taghi Ismail, Razali Johari, Zaharah Webb, Jeffrey Frank |
| author_facet | Ahmadi, Mohammad Taghi Ismail, Razali Johari, Zaharah Webb, Jeffrey Frank |
| author_sort | Ahmadi, Mohammad Taghi |
| collection | ePrints |
| description | The low-energy-limit band structure of carbon nanotubes (CNTs) indicates parabolic behavior. However it is not parabolic in other parts of the band energy. Based on the confinement effect we present an analytical model that captures the essence of the physical processes in a carbon nanotube field effect transistor (CNTFET). The model covers seamlessly the whole range of transport from drift-diffusion to ballistic. It has been clarified that the intrinsic speed of CNTs is governed by the transit time of electrons. Although the transit time is more dependent on the saturation velocity than on the weak-field mobility, the feature of high-electron mobility is beneficial in the sense that the drift velocity is always maintained closer to the saturation velocity, at least at the drain end of the transistor where electric field is necessarily high and controls the saturation current. The results obtained are applied to the modeling of the current-voltage characteristics of a CNTFET. The channel-length modulation is shown to arise from the drain velocity becoming closer to the ultimate saturation velocity as the drain voltage is increased. |
| first_indexed | 2024-03-05T18:44:28Z |
| format | Article |
| id | utm.eprints-29323 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:44:28Z |
| publishDate | 2011 |
| publisher | American Scientific Publishers |
| record_format | dspace |
| spelling | utm.eprints-293232019-03-25T08:06:56Z http://eprints.utm.my/29323/ Single wall carbon nanotube field effect transistor model Ahmadi, Mohammad Taghi Ismail, Razali Johari, Zaharah Webb, Jeffrey Frank TK Electrical engineering. Electronics Nuclear engineering The low-energy-limit band structure of carbon nanotubes (CNTs) indicates parabolic behavior. However it is not parabolic in other parts of the band energy. Based on the confinement effect we present an analytical model that captures the essence of the physical processes in a carbon nanotube field effect transistor (CNTFET). The model covers seamlessly the whole range of transport from drift-diffusion to ballistic. It has been clarified that the intrinsic speed of CNTs is governed by the transit time of electrons. Although the transit time is more dependent on the saturation velocity than on the weak-field mobility, the feature of high-electron mobility is beneficial in the sense that the drift velocity is always maintained closer to the saturation velocity, at least at the drain end of the transistor where electric field is necessarily high and controls the saturation current. The results obtained are applied to the modeling of the current-voltage characteristics of a CNTFET. The channel-length modulation is shown to arise from the drain velocity becoming closer to the ultimate saturation velocity as the drain voltage is increased. American Scientific Publishers 2011-02 Article PeerReviewed Ahmadi, Mohammad Taghi and Ismail, Razali and Johari, Zaharah and Webb, Jeffrey Frank (2011) Single wall carbon nanotube field effect transistor model. Journal of Computational and Theoretical Nanoscience, 8 (2). pp. 261-267. ISSN 1546-1955 http://dx.doi.org/10.1166/jctn.2011.1687 DOI:10.1166/jctn.2011.1687 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Ahmadi, Mohammad Taghi Ismail, Razali Johari, Zaharah Webb, Jeffrey Frank Single wall carbon nanotube field effect transistor model |
| title | Single wall carbon nanotube field effect transistor model |
| title_full | Single wall carbon nanotube field effect transistor model |
| title_fullStr | Single wall carbon nanotube field effect transistor model |
| title_full_unstemmed | Single wall carbon nanotube field effect transistor model |
| title_short | Single wall carbon nanotube field effect transistor model |
| title_sort | single wall carbon nanotube field effect transistor model |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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