Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temper...
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Elsevier
2011
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| author | Wahab, Yussof Othaman, Zulkafli Ismail, Abd. Khamim Hamidinezhad, Habib |
| author_facet | Wahab, Yussof Othaman, Zulkafli Ismail, Abd. Khamim Hamidinezhad, Habib |
| author_sort | Wahab, Yussof |
| collection | ePrints |
| description | Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temperatures ranging from 363 to 230 degrees C. The morphology of the synthesized SiNWs was characterized by means of field emission scanning electron microscope equipped with energy dispersive X-ray, high resolution transmission electron microscopy, X-ray diffraction technique and Raman spectroscope. Results demonstrated that the SiNWs can be grown at the temperature as low as 250 degrees C. In addition, it was revealed that the grown wires were silicon-crystallized. |
| first_indexed | 2024-03-05T18:44:44Z |
| format | Article |
| id | utm.eprints-29417 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:44:44Z |
| publishDate | 2011 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | utm.eprints-294172022-02-28T13:26:00Z http://eprints.utm.my/29417/ Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition Wahab, Yussof Othaman, Zulkafli Ismail, Abd. Khamim Hamidinezhad, Habib TP Chemical technology Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au-Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor-solid-solid mechanism at temperatures ranging from 363 to 230 degrees C. The morphology of the synthesized SiNWs was characterized by means of field emission scanning electron microscope equipped with energy dispersive X-ray, high resolution transmission electron microscopy, X-ray diffraction technique and Raman spectroscope. Results demonstrated that the SiNWs can be grown at the temperature as low as 250 degrees C. In addition, it was revealed that the grown wires were silicon-crystallized. Elsevier 2011-08-15 Article PeerReviewed Wahab, Yussof and Othaman, Zulkafli and Ismail, Abd. Khamim and Hamidinezhad, Habib (2011) Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition. Applied Surface Science, 257 (21). pp. 9188-9192. ISSN 0169-4332 http://dx.doi.org/10.1016/j.apsusc.2011.05.130 DOI:10.1016/j.apsusc.2011.05.130 |
| spellingShingle | TP Chemical technology Wahab, Yussof Othaman, Zulkafli Ismail, Abd. Khamim Hamidinezhad, Habib Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition |
| title | Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition |
| title_full | Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition |
| title_fullStr | Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition |
| title_full_unstemmed | Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition |
| title_short | Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition |
| title_sort | synthesis and analysis of silicon nanowire below si au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition |
| topic | TP Chemical technology |
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