The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth
Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that...
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World Scientific
2011
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| author | Othaman, Zulkafli Sakrani, Samsudi Wibowo , Edy Sumpono, Imam |
| author_facet | Othaman, Zulkafli Sakrani, Samsudi Wibowo , Edy Sumpono, Imam |
| author_sort | Othaman, Zulkafli |
| collection | ePrints |
| description | Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition. |
| first_indexed | 2024-03-05T18:44:54Z |
| format | Article |
| id | utm.eprints-29478 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:44:54Z |
| publishDate | 2011 |
| publisher | World Scientific |
| record_format | dspace |
| spelling | utm.eprints-294782017-02-13T07:23:26Z http://eprints.utm.my/29478/ The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth Othaman, Zulkafli Sakrani, Samsudi Wibowo , Edy Sumpono, Imam Q Science (General) Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition. World Scientific 2011 Article PeerReviewed Othaman, Zulkafli and Sakrani, Samsudi and Wibowo , Edy and Sumpono, Imam (2011) The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth. NANO, 6 (2). pp. 159-165. ISSN 1793-2920 http://dx.doi.org/10.1142/S1793292011002457 10.1142/S1793292011002457 |
| spellingShingle | Q Science (General) Othaman, Zulkafli Sakrani, Samsudi Wibowo , Edy Sumpono, Imam The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth |
| title | The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth |
| title_full | The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth |
| title_fullStr | The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth |
| title_full_unstemmed | The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth |
| title_short | The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth |
| title_sort | advantage of low growth temperature and v iii ratio for in x ga 1 x as nanowires growth |
| topic | Q Science (General) |
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