Focused ion beam milling of exfoliated graphene for prototyping of electronic devices

We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250 nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graph...

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Main Authors: Schmidt, Marek E., Johari, Zaharah, Ismail, Razali, Mizuta, Hiroshi, Chong, Harold M. H.
Format: Article
Published: Elsevier 2012
Subjects:
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author Schmidt, Marek E.
Johari, Zaharah
Ismail, Razali
Mizuta, Hiroshi
Chong, Harold M. H.
author_facet Schmidt, Marek E.
Johari, Zaharah
Ismail, Razali
Mizuta, Hiroshi
Chong, Harold M. H.
author_sort Schmidt, Marek E.
collection ePrints
description We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250 nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58 kΩ.
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spelling utm.eprints-336522018-11-30T06:37:38Z http://eprints.utm.my/33652/ Focused ion beam milling of exfoliated graphene for prototyping of electronic devices Schmidt, Marek E. Johari, Zaharah Ismail, Razali Mizuta, Hiroshi Chong, Harold M. H. TK Electrical engineering. Electronics Nuclear engineering We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250 nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58 kΩ. Elsevier 2012-10 Article PeerReviewed Schmidt, Marek E. and Johari, Zaharah and Ismail, Razali and Mizuta, Hiroshi and Chong, Harold M. H. (2012) Focused ion beam milling of exfoliated graphene for prototyping of electronic devices. Microelectronic Engineering, 98 . pp. 313-316. ISSN 0167-9317 http://dx.doi.org/10.1016/j.mee.2012.07.090 DOI:10.1016/j.mee.2012.07.090
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Schmidt, Marek E.
Johari, Zaharah
Ismail, Razali
Mizuta, Hiroshi
Chong, Harold M. H.
Focused ion beam milling of exfoliated graphene for prototyping of electronic devices
title Focused ion beam milling of exfoliated graphene for prototyping of electronic devices
title_full Focused ion beam milling of exfoliated graphene for prototyping of electronic devices
title_fullStr Focused ion beam milling of exfoliated graphene for prototyping of electronic devices
title_full_unstemmed Focused ion beam milling of exfoliated graphene for prototyping of electronic devices
title_short Focused ion beam milling of exfoliated graphene for prototyping of electronic devices
title_sort focused ion beam milling of exfoliated graphene for prototyping of electronic devices
topic TK Electrical engineering. Electronics Nuclear engineering
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AT joharizaharah focusedionbeammillingofexfoliatedgrapheneforprototypingofelectronicdevices
AT ismailrazali focusedionbeammillingofexfoliatedgrapheneforprototypingofelectronicdevices
AT mizutahiroshi focusedionbeammillingofexfoliatedgrapheneforprototypingofelectronicdevices
AT chongharoldmh focusedionbeammillingofexfoliatedgrapheneforprototypingofelectronicdevices