Focused ion beam milling of exfoliated graphene for prototyping of electronic devices
We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250 nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graph...
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Elsevier
2012
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author | Schmidt, Marek E. Johari, Zaharah Ismail, Razali Mizuta, Hiroshi Chong, Harold M. H. |
author_facet | Schmidt, Marek E. Johari, Zaharah Ismail, Razali Mizuta, Hiroshi Chong, Harold M. H. |
author_sort | Schmidt, Marek E. |
collection | ePrints |
description | We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250 nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58 kΩ. |
first_indexed | 2024-03-05T18:54:35Z |
format | Article |
id | utm.eprints-33652 |
institution | Universiti Teknologi Malaysia - ePrints |
last_indexed | 2024-03-05T18:54:35Z |
publishDate | 2012 |
publisher | Elsevier |
record_format | dspace |
spelling | utm.eprints-336522018-11-30T06:37:38Z http://eprints.utm.my/33652/ Focused ion beam milling of exfoliated graphene for prototyping of electronic devices Schmidt, Marek E. Johari, Zaharah Ismail, Razali Mizuta, Hiroshi Chong, Harold M. H. TK Electrical engineering. Electronics Nuclear engineering We demonstrate a focused ion beam (FIB) prototyping technique that accurately aligns a two terminal contact structure to exfoliated graphene. Alignment accuracy of better than 250 nm has been achieved without direct FIB imaging of the graphene. In situ deposited tungsten is used to contact the graphene channel and the measured channel resistance is 58 kΩ. Elsevier 2012-10 Article PeerReviewed Schmidt, Marek E. and Johari, Zaharah and Ismail, Razali and Mizuta, Hiroshi and Chong, Harold M. H. (2012) Focused ion beam milling of exfoliated graphene for prototyping of electronic devices. Microelectronic Engineering, 98 . pp. 313-316. ISSN 0167-9317 http://dx.doi.org/10.1016/j.mee.2012.07.090 DOI:10.1016/j.mee.2012.07.090 |
spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Schmidt, Marek E. Johari, Zaharah Ismail, Razali Mizuta, Hiroshi Chong, Harold M. H. Focused ion beam milling of exfoliated graphene for prototyping of electronic devices |
title | Focused ion beam milling of exfoliated graphene for prototyping of electronic devices |
title_full | Focused ion beam milling of exfoliated graphene for prototyping of electronic devices |
title_fullStr | Focused ion beam milling of exfoliated graphene for prototyping of electronic devices |
title_full_unstemmed | Focused ion beam milling of exfoliated graphene for prototyping of electronic devices |
title_short | Focused ion beam milling of exfoliated graphene for prototyping of electronic devices |
title_sort | focused ion beam milling of exfoliated graphene for prototyping of electronic devices |
topic | TK Electrical engineering. Electronics Nuclear engineering |
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