Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser
The polycrystalline thin copper films on semiconductor substrates are of interest for many semiconductor devices. Hence the aim of this research is to recrystallize copper silicon thin film. In order to achieve this objective, the Q-switched Nd:YAG laser was employed as a source to re-crystallize th...
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| Format: | Thesis |
| Language: | English |
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2012
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| Online Access: | http://eprints.utm.my/33741/2/FatoumaMilladAhmedAlegailyMFS2012.pdf |
| _version_ | 1796857246709186560 |
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| author | Ahmed Alegaily, Fatouma Millad |
| author_facet | Ahmed Alegaily, Fatouma Millad |
| author_sort | Ahmed Alegaily, Fatouma Millad |
| collection | ePrints |
| description | The polycrystalline thin copper films on semiconductor substrates are of interest for many semiconductor devices. Hence the aim of this research is to recrystallize copper silicon thin film. In order to achieve this objective, the Q-switched Nd:YAG laser was employed as a source to re-crystallize the doped silicon thin film (STF) with copper. A silicon thin film was prepared via low pressure physical vapor deposition (PVD). The STF was annealed by two techniques, first by using conventional method via tube furnace, second by using Q-switched Nd:YAG laser annealing. The microstructure of thin film was analyzed using Atomic Force Microscope (AFM). The results showed that, the grain size of the copper film increased with the energy density of the Nd:YAG laser. However, the grain size was found to reduce after exceeding the critical energy. The large grain size obtained for copper silicon thin film was 2426.04 nm at the corresponding energy density of 3989.48 mJ/cm-2. |
| first_indexed | 2024-03-05T18:54:50Z |
| format | Thesis |
| id | utm.eprints-33741 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T18:54:50Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | utm.eprints-337412018-04-27T01:26:45Z http://eprints.utm.my/33741/ Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser Ahmed Alegaily, Fatouma Millad QC Physics The polycrystalline thin copper films on semiconductor substrates are of interest for many semiconductor devices. Hence the aim of this research is to recrystallize copper silicon thin film. In order to achieve this objective, the Q-switched Nd:YAG laser was employed as a source to re-crystallize the doped silicon thin film (STF) with copper. A silicon thin film was prepared via low pressure physical vapor deposition (PVD). The STF was annealed by two techniques, first by using conventional method via tube furnace, second by using Q-switched Nd:YAG laser annealing. The microstructure of thin film was analyzed using Atomic Force Microscope (AFM). The results showed that, the grain size of the copper film increased with the energy density of the Nd:YAG laser. However, the grain size was found to reduce after exceeding the critical energy. The large grain size obtained for copper silicon thin film was 2426.04 nm at the corresponding energy density of 3989.48 mJ/cm-2. 2012-07 Thesis NonPeerReviewed application/pdf en http://eprints.utm.my/33741/2/FatoumaMilladAhmedAlegailyMFS2012.pdf Ahmed Alegaily, Fatouma Millad (2012) Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser. Masters thesis, Universiti Teknologi Malaysia, Faculty of Science. http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:70528?site_name=Restricted Repository |
| spellingShingle | QC Physics Ahmed Alegaily, Fatouma Millad Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser |
| title | Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser |
| title_full | Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser |
| title_fullStr | Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser |
| title_full_unstemmed | Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser |
| title_short | Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser |
| title_sort | re crystallization of metallized silicon wafer with copper film by q switched nd yag laser |
| topic | QC Physics |
| url | http://eprints.utm.my/33741/2/FatoumaMilladAhmedAlegailyMFS2012.pdf |
| work_keys_str_mv | AT ahmedalegailyfatoumamillad recrystallizationofmetallizedsiliconwaferwithcopperfilmbyqswitchedndyaglaser |