Ballistic transport in nanoscale devices
Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and...
| Main Author: | |
|---|---|
| Format: | Book Section |
| Published: |
Dept of Microelectronics
2012
|
| Subjects: |
| _version_ | 1796857378066399232 |
|---|---|
| author | Arora, Vijay Kumar |
| author_facet | Arora, Vijay Kumar |
| author_sort | Arora, Vijay Kumar |
| collection | ePrints |
| description | Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and applied. Ballistic injection from the contacts is shown to be of paramount importance as channels scale down to lengths below the scattering-limited mean free path (mfp). Mobility and drift velocity expressions covering the wide spectrum are obtained and compared with existing experimental data. The gamut spans low to high field transport, nondegenerate to degenerate statistics, and scattering-limited stochastic to unilateral streamlined regime. |
| first_indexed | 2024-03-05T18:56:46Z |
| format | Book Section |
| id | utm.eprints-34558 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:56:46Z |
| publishDate | 2012 |
| publisher | Dept of Microelectronics |
| record_format | dspace |
| spelling | utm.eprints-345582017-02-02T05:04:03Z http://eprints.utm.my/34558/ Ballistic transport in nanoscale devices Arora, Vijay Kumar TK Electrical engineering. Electronics Nuclear engineering Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and applied. Ballistic injection from the contacts is shown to be of paramount importance as channels scale down to lengths below the scattering-limited mean free path (mfp). Mobility and drift velocity expressions covering the wide spectrum are obtained and compared with existing experimental data. The gamut spans low to high field transport, nondegenerate to degenerate statistics, and scattering-limited stochastic to unilateral streamlined regime. Dept of Microelectronics 2012 Book Section PeerReviewed Arora, Vijay Kumar (2012) Ballistic transport in nanoscale devices. In: Proceedings of the 19th International Conference - Mixed Design of Integrated Circuits and Systems, MIXDES 2012. Dept of Microelectronics, Lodz. Poland, pp. 17-24. ISBN 978-836295443-8 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6226264 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Arora, Vijay Kumar Ballistic transport in nanoscale devices |
| title | Ballistic transport in nanoscale devices |
| title_full | Ballistic transport in nanoscale devices |
| title_fullStr | Ballistic transport in nanoscale devices |
| title_full_unstemmed | Ballistic transport in nanoscale devices |
| title_short | Ballistic transport in nanoscale devices |
| title_sort | ballistic transport in nanoscale devices |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| work_keys_str_mv | AT aroravijaykumar ballistictransportinnanoscaledevices |