Thermal stress effect in diode end-pumped Nd:YVO4 bar laser
The thermal stress effect on various doping levels of yttrium vanadate crystal Nd:YVO4 is investigated. Diode end-pumped source was used to obtain the input-output characteristics of the vanadate crystal. The laser performance of the low doping crystal is poor since the optical conversion efficiency...
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| Format: | Book Section |
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American Institute of Physics
2012
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| _version_ | 1796857487544025088 |
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| author | Bidin, Noriah Krishnan, Ganesan Khamsan, Nur Ezaan Zainal, Roslinda Bakhtiar, Hazri |
| author_facet | Bidin, Noriah Krishnan, Ganesan Khamsan, Nur Ezaan Zainal, Roslinda Bakhtiar, Hazri |
| author_sort | Bidin, Noriah |
| collection | ePrints |
| description | The thermal stress effect on various doping levels of yttrium vanadate crystal Nd:YVO4 is investigated. Diode end-pumped source was used to obtain the input-output characteristics of the vanadate crystal. The laser performance of the low doping crystal is poor since the optical conversion efficiency is small and high threshold pump power. However the low Dopant crystal is not associated with thermal stress thus no thermal damage. Differently with higher concentration of Nd ions crystal, the laser performance is relatively high but it is accompanied with thermal damage which comprised of microcrack, microfracture and contamination. The high absorption on the doping ions with additional external impurities causes extra heat generation which leads to thermal fracture. |
| first_indexed | 2024-03-05T18:58:31Z |
| format | Book Section |
| id | utm.eprints-36053 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:58:31Z |
| publishDate | 2012 |
| publisher | American Institute of Physics |
| record_format | dspace |
| spelling | utm.eprints-360532017-02-02T05:19:03Z http://eprints.utm.my/36053/ Thermal stress effect in diode end-pumped Nd:YVO4 bar laser Bidin, Noriah Krishnan, Ganesan Khamsan, Nur Ezaan Zainal, Roslinda Bakhtiar, Hazri Q Science The thermal stress effect on various doping levels of yttrium vanadate crystal Nd:YVO4 is investigated. Diode end-pumped source was used to obtain the input-output characteristics of the vanadate crystal. The laser performance of the low doping crystal is poor since the optical conversion efficiency is small and high threshold pump power. However the low Dopant crystal is not associated with thermal stress thus no thermal damage. Differently with higher concentration of Nd ions crystal, the laser performance is relatively high but it is accompanied with thermal damage which comprised of microcrack, microfracture and contamination. The high absorption on the doping ions with additional external impurities causes extra heat generation which leads to thermal fracture. American Institute of Physics 2012 Book Section PeerReviewed Bidin, Noriah and Krishnan, Ganesan and Khamsan, Nur Ezaan and Zainal, Roslinda and Bakhtiar, Hazri (2012) Thermal stress effect in diode end-pumped Nd:YVO4 bar laser. In: AIP Conference Proceedings. American Institute of Physics, Zurich, Switzerland, pp. 191-194. ISBN 978-073541056-5 http://dx.doi.org/10.1063/1.4732491 DOI:10.1063/1.4732491 |
| spellingShingle | Q Science Bidin, Noriah Krishnan, Ganesan Khamsan, Nur Ezaan Zainal, Roslinda Bakhtiar, Hazri Thermal stress effect in diode end-pumped Nd:YVO4 bar laser |
| title | Thermal stress effect in diode end-pumped Nd:YVO4 bar laser |
| title_full | Thermal stress effect in diode end-pumped Nd:YVO4 bar laser |
| title_fullStr | Thermal stress effect in diode end-pumped Nd:YVO4 bar laser |
| title_full_unstemmed | Thermal stress effect in diode end-pumped Nd:YVO4 bar laser |
| title_short | Thermal stress effect in diode end-pumped Nd:YVO4 bar laser |
| title_sort | thermal stress effect in diode end pumped nd yvo4 bar laser |
| topic | Q Science |
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