Current-voltage modeling of bilayer graphene nanoribbon Schottky diode
This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to an exposed semi-conductor surface. The metal...
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| Format: | Conference or Workshop Item |
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2011
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| author | Rahmani, Komeil Rahmani, Meisam Ahmadi, Mohammad Taghi Shayesteh, Nahid Amin, Noraliah Aziziah Ismail, Razali |
| author_facet | Rahmani, Komeil Rahmani, Meisam Ahmadi, Mohammad Taghi Shayesteh, Nahid Amin, Noraliah Aziziah Ismail, Razali |
| author_sort | Rahmani, Komeil |
| collection | ePrints |
| description | This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to an exposed semi-conductor surface. The metal semiconductor diodes were replaced by the p-n junction in the 1950's because they were not easily reproduced or found to be mechanically reliable. As a result the practicability of making use of the semiconductor and vacuum technology to construct reproducible and dependable metal semiconductor contacts. Therefore, a high consideration occurs for the schottky barrier diode or metal semiconductor rectifying contact. A model to evaluate or design the current-voltage (I-V) characteristics of BGNRs schottky diode as a function of physical parameters, such as GNR width (w), effective mass (m*), gate insulator thickness (tins), and electrical parameters, such as schottky barrier (SB) height (φSB) are presented in this paper. |
| first_indexed | 2024-03-05T19:17:52Z |
| format | Conference or Workshop Item |
| id | utm.eprints-45708 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T19:17:52Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | utm.eprints-457082017-07-02T07:52:23Z http://eprints.utm.my/45708/ Current-voltage modeling of bilayer graphene nanoribbon Schottky diode Rahmani, Komeil Rahmani, Meisam Ahmadi, Mohammad Taghi Shayesteh, Nahid Amin, Noraliah Aziziah Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to an exposed semi-conductor surface. The metal semiconductor diodes were replaced by the p-n junction in the 1950's because they were not easily reproduced or found to be mechanically reliable. As a result the practicability of making use of the semiconductor and vacuum technology to construct reproducible and dependable metal semiconductor contacts. Therefore, a high consideration occurs for the schottky barrier diode or metal semiconductor rectifying contact. A model to evaluate or design the current-voltage (I-V) characteristics of BGNRs schottky diode as a function of physical parameters, such as GNR width (w), effective mass (m*), gate insulator thickness (tins), and electrical parameters, such as schottky barrier (SB) height (φSB) are presented in this paper. 2011 Conference or Workshop Item PeerReviewed Rahmani, Komeil and Rahmani, Meisam and Ahmadi, Mohammad Taghi and Shayesteh, Nahid and Amin, Noraliah Aziziah and Ismail, Razali (2011) Current-voltage modeling of bilayer graphene nanoribbon Schottky diode. In: 2011 IEEE Regional Symposium On Micro And Nano Electronics (IEEE-RSM 2011). http://ieeexplore.ieee.org/document/6088337/authors?ctx=authors |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Rahmani, Komeil Rahmani, Meisam Ahmadi, Mohammad Taghi Shayesteh, Nahid Amin, Noraliah Aziziah Ismail, Razali Current-voltage modeling of bilayer graphene nanoribbon Schottky diode |
| title | Current-voltage modeling of bilayer graphene nanoribbon Schottky diode |
| title_full | Current-voltage modeling of bilayer graphene nanoribbon Schottky diode |
| title_fullStr | Current-voltage modeling of bilayer graphene nanoribbon Schottky diode |
| title_full_unstemmed | Current-voltage modeling of bilayer graphene nanoribbon Schottky diode |
| title_short | Current-voltage modeling of bilayer graphene nanoribbon Schottky diode |
| title_sort | current voltage modeling of bilayer graphene nanoribbon schottky diode |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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