Modeling the effect of velocity saturation in nanoscale MOSFET
MOSFET scaling throughout the years has enabled us to pack million of MOS transistors on a single chip to keep in pace with Moore’s Law. The introduction of 65 nm and 90 nm process technology offer low power, high-density and highspeed generation of processor with latest technological advancement....
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| Format: | Thesis |
| Language: | English |
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2006
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| Online Access: | http://eprints.utm.my/4593/1/MichaelTanLoongPengMFKE2006.pdf |