Effects of pattern dimensions on stabilization of crystal orientation for (111) ge-on-insulator in rapid melting growth
(111)-oriented Ge-on-insulator (GOI) is the key material structure for next generation multifunctional large scale integrated circuits. The (111) GOI structure can be implemented for high-speed transistor channels, as well as templates for the integration of optoelectronic and spintronic materials o...
| Main Authors: | , , , |
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| Format: | Article |
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2013
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