Modeling the schottky barrier properties of graphene nanoribbon schottky diode
The increasing demand for small sized, low power consumption and high processing speeds have always been the pillars of transistor development. To meet the demands of the transistor, the current trend is to reduce the size of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) into nanoscale...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | http://eprints.utm.my/48003/25/WongKingKiatMFKE2014.pdf |