Effect of antimony variation on the physical properties of thermally deposited SnS thin films

Antimony doped tin sulphide thin films were prepared on glass substrate from SnS and Sb2S3 powder by thermal evaporation techniques. The thin films were annealed in argon gas at 250°C for 30 minutes. The films were characterized by X-ray diffraction (XRD), optical microscopy, optical absorption, pho...

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Main Authors: Ali, Nisar, Ajmal, S., Shah, Muhammad Tahir, Ahmed, Rashid, Ul-Haq, Bakhtiar, Shaari, Amiruddin
Format: Article
Language:English
Published: National Institute R and D of Materials Physics 2014
Subjects:
Online Access:http://eprints.utm.my/52477/1/RashidAhmed2014_Effectofantimonyvariation.pdf
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author Ali, Nisar
Ajmal, S.
Shah, Muhammad Tahir
Ahmed, Rashid
Ul-Haq, Bakhtiar
Shaari, Amiruddin
author_facet Ali, Nisar
Ajmal, S.
Shah, Muhammad Tahir
Ahmed, Rashid
Ul-Haq, Bakhtiar
Shaari, Amiruddin
author_sort Ali, Nisar
collection ePrints
description Antimony doped tin sulphide thin films were prepared on glass substrate from SnS and Sb2S3 powder by thermal evaporation techniques. The thin films were annealed in argon gas at 250°C for 30 minutes. The films were characterized by X-ray diffraction (XRD), optical microscopy, optical absorption, photoconductivity, and hot-probe techniques. The XRD studies revealed that the annealed films are polycrystalline. The band gap was found to be in the range 2.2-2.6eV along with p-type conductivity. The value of the absorption coefficient is found to be higher than 105 cm-1
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spelling utm.eprints-524772018-09-19T05:07:36Z http://eprints.utm.my/52477/ Effect of antimony variation on the physical properties of thermally deposited SnS thin films Ali, Nisar Ajmal, S. Shah, Muhammad Tahir Ahmed, Rashid Ul-Haq, Bakhtiar Shaari, Amiruddin Q Science Antimony doped tin sulphide thin films were prepared on glass substrate from SnS and Sb2S3 powder by thermal evaporation techniques. The thin films were annealed in argon gas at 250°C for 30 minutes. The films were characterized by X-ray diffraction (XRD), optical microscopy, optical absorption, photoconductivity, and hot-probe techniques. The XRD studies revealed that the annealed films are polycrystalline. The band gap was found to be in the range 2.2-2.6eV along with p-type conductivity. The value of the absorption coefficient is found to be higher than 105 cm-1 National Institute R and D of Materials Physics 2014 Article PeerReviewed application/pdf en http://eprints.utm.my/52477/1/RashidAhmed2014_Effectofantimonyvariation.pdf Ali, Nisar and Ajmal, S. and Shah, Muhammad Tahir and Ahmed, Rashid and Ul-Haq, Bakhtiar and Shaari, Amiruddin (2014) Effect of antimony variation on the physical properties of thermally deposited SnS thin films. Chalcogenide Letters, 11 (10). pp. 503-508. ISSN 1584-8663 https://www.chalcogen.ro/503_Ali.pdf
spellingShingle Q Science
Ali, Nisar
Ajmal, S.
Shah, Muhammad Tahir
Ahmed, Rashid
Ul-Haq, Bakhtiar
Shaari, Amiruddin
Effect of antimony variation on the physical properties of thermally deposited SnS thin films
title Effect of antimony variation on the physical properties of thermally deposited SnS thin films
title_full Effect of antimony variation on the physical properties of thermally deposited SnS thin films
title_fullStr Effect of antimony variation on the physical properties of thermally deposited SnS thin films
title_full_unstemmed Effect of antimony variation on the physical properties of thermally deposited SnS thin films
title_short Effect of antimony variation on the physical properties of thermally deposited SnS thin films
title_sort effect of antimony variation on the physical properties of thermally deposited sns thin films
topic Q Science
url http://eprints.utm.my/52477/1/RashidAhmed2014_Effectofantimonyvariation.pdf
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