Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behave...

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Bibliographic Details
Main Authors: Mohamed Sulthan, Suhana, Ditshego, Nonofo J., Gunn, Robert, Ashburn, Peter, Chong, Harold M. H.
Format: Article
Language:English
Published: Springer New York LLC 2014
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/52478/1/SuhanaMohamedSulthan2014_Effectofatomiclayer.pdf

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http://eprints.utm.my/52478/1/SuhanaMohamedSulthan2014_Effectofatomiclayer.pdf

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