Modeling of nanodevices and nanostructures
Since its first development in more than half a century ago, the silicon-based transistors have been experiencing rapid growth following the trend known as Moore’s Law. The transistor scaling into nanometer regime has reached decananometer dimension since the last decade, which brings about the unpr...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Hindawi Publishing Corporation
2014
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| Online Access: | http://eprints.utm.my/54140/1/RazaliIsmail2014_ModelingofNanodevicesandNanostructures.pdf |
| _version_ | 1796859946133880832 |
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| author | Ismail, Razali Riyadi, Munawar A. Ahmadi, Mohammad Taghi |
| author_facet | Ismail, Razali Riyadi, Munawar A. Ahmadi, Mohammad Taghi |
| author_sort | Ismail, Razali |
| collection | ePrints |
| description | Since its first development in more than half a century ago, the silicon-based transistors have been experiencing rapid growth following the trend known as Moore’s Law. The transistor scaling into nanometer regime has reached decananometer dimension since the last decade, which brings about the unprecedented complexities in the fabrication process, especially in the effort to keep pace with the technology projection. In addition, the conventional device structure that has been around for decades is extremely hard to be scaled further due to many limitations. These obstacles generate broad interests on novel device architectures as well as involvement of new materials other than silicon. The industry is already preparing for the postsilicon era, with the enormous researches in emerging materials such as III–V compounds, SiGe, and carbon as can be observed from the International Technology Roadmap for Semiconductor (ITRS) |
| first_indexed | 2024-03-05T19:34:45Z |
| format | Article |
| id | utm.eprints-54140 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T19:34:45Z |
| publishDate | 2014 |
| publisher | Hindawi Publishing Corporation |
| record_format | dspace |
| spelling | utm.eprints-541402018-07-30T08:51:37Z http://eprints.utm.my/54140/ Modeling of nanodevices and nanostructures Ismail, Razali Riyadi, Munawar A. Ahmadi, Mohammad Taghi TK Electrical engineering. Electronics Nuclear engineering Since its first development in more than half a century ago, the silicon-based transistors have been experiencing rapid growth following the trend known as Moore’s Law. The transistor scaling into nanometer regime has reached decananometer dimension since the last decade, which brings about the unprecedented complexities in the fabrication process, especially in the effort to keep pace with the technology projection. In addition, the conventional device structure that has been around for decades is extremely hard to be scaled further due to many limitations. These obstacles generate broad interests on novel device architectures as well as involvement of new materials other than silicon. The industry is already preparing for the postsilicon era, with the enormous researches in emerging materials such as III–V compounds, SiGe, and carbon as can be observed from the International Technology Roadmap for Semiconductor (ITRS) Hindawi Publishing Corporation 2014 Article PeerReviewed application/pdf en http://eprints.utm.my/54140/1/RazaliIsmail2014_ModelingofNanodevicesandNanostructures.pdf Ismail, Razali and Riyadi, Munawar A. and Ahmadi, Mohammad Taghi (2014) Modeling of nanodevices and nanostructures. JOURNAL OF NANOMATERIALS . ISSN 1687-4110 http://dx.doi.org/10.1155/2014/417127 DOI: 10.1155/2014/417127 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Ismail, Razali Riyadi, Munawar A. Ahmadi, Mohammad Taghi Modeling of nanodevices and nanostructures |
| title | Modeling of nanodevices and nanostructures |
| title_full | Modeling of nanodevices and nanostructures |
| title_fullStr | Modeling of nanodevices and nanostructures |
| title_full_unstemmed | Modeling of nanodevices and nanostructures |
| title_short | Modeling of nanodevices and nanostructures |
| title_sort | modeling of nanodevices and nanostructures |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/54140/1/RazaliIsmail2014_ModelingofNanodevicesandNanostructures.pdf |
| work_keys_str_mv | AT ismailrazali modelingofnanodevicesandnanostructures AT riyadimunawara modelingofnanodevicesandnanostructures AT ahmadimohammadtaghi modelingofnanodevicesandnanostructures |