Influences of magnetic fields on current-voltage characteristics of gold-DNA-gold structure with variable gaps
Achieving highly sensitive magnetic sensors by means of Metal-DNA-Metal (MDM) structure is a key issue. DNA, being a genetic information carrier in living cells reveals tunable semiconducting response in the presence of external electric and magnetic fields, which is promising for molecular electron...
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| Format: | Article |
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Elsevier
2015
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| _version_ | 1796860289507917824 |
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| author | Khatir, Nadia Mahmoudi Abdul Malek, Zulkurnain Banihashemian, Seyedeh Maryam |
| author_facet | Khatir, Nadia Mahmoudi Abdul Malek, Zulkurnain Banihashemian, Seyedeh Maryam |
| author_sort | Khatir, Nadia Mahmoudi |
| collection | ePrints |
| description | Achieving highly sensitive magnetic sensors by means of Metal-DNA-Metal (MDM) structure is a key issue. DNA, being a genetic information carrier in living cells reveals tunable semiconducting response in the presence of external electric and magnetic fields, which is promising for molecular electronics. The influence of magnetic fields up to 1200 mT on the current-voltage (I-V) behavior of Gold-DNA-Gold (GDG) structure having variable gap sizes from 20-50 µm are reported in this work. These structures were fabricated using UV lithography, DC magnetron sputtering and thermal evaporation techniques. DNA strands were extracted from Boesenbergia rotunda plant via standard protocol. The acquired I-V characteristics display the semiconducting diode nature of DNA in GDG structures. The potential barrier for all the structures exhibit an increasing trend with the increase of externally imposed magnetic field irrespective of variable gap sizes. Furthermore, the potential barrier in GDG junction at higher magnetic field strengths (>1000 mT) is found to be considerably enhanced. This enhancement in the junction barrier height at elevated magnetic fields is attributed to the reduction of carrier mobility and augmentation of resistance. The achieved admirable features of magnetic sensitivity suggest the viability of using these GDG sandwiches as a prospective magnetic sensor |
| first_indexed | 2024-03-05T19:39:09Z |
| format | Article |
| id | utm.eprints-55937 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T19:39:09Z |
| publishDate | 2015 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | utm.eprints-559372017-02-15T00:59:00Z http://eprints.utm.my/55937/ Influences of magnetic fields on current-voltage characteristics of gold-DNA-gold structure with variable gaps Khatir, Nadia Mahmoudi Abdul Malek, Zulkurnain Banihashemian, Seyedeh Maryam TK Electrical engineering. Electronics Nuclear engineering Achieving highly sensitive magnetic sensors by means of Metal-DNA-Metal (MDM) structure is a key issue. DNA, being a genetic information carrier in living cells reveals tunable semiconducting response in the presence of external electric and magnetic fields, which is promising for molecular electronics. The influence of magnetic fields up to 1200 mT on the current-voltage (I-V) behavior of Gold-DNA-Gold (GDG) structure having variable gap sizes from 20-50 µm are reported in this work. These structures were fabricated using UV lithography, DC magnetron sputtering and thermal evaporation techniques. DNA strands were extracted from Boesenbergia rotunda plant via standard protocol. The acquired I-V characteristics display the semiconducting diode nature of DNA in GDG structures. The potential barrier for all the structures exhibit an increasing trend with the increase of externally imposed magnetic field irrespective of variable gap sizes. Furthermore, the potential barrier in GDG junction at higher magnetic field strengths (>1000 mT) is found to be considerably enhanced. This enhancement in the junction barrier height at elevated magnetic fields is attributed to the reduction of carrier mobility and augmentation of resistance. The achieved admirable features of magnetic sensitivity suggest the viability of using these GDG sandwiches as a prospective magnetic sensor Elsevier 2015-08 Article PeerReviewed Khatir, Nadia Mahmoudi and Abdul Malek, Zulkurnain and Banihashemian, Seyedeh Maryam (2015) Influences of magnetic fields on current-voltage characteristics of gold-DNA-gold structure with variable gaps. Materials Science in Semiconductor Processing, 36 . pp. 134-139. ISSN 1369-8001 http://dx.doi.org/10.1016/j.mssp.2015.02.085 DOI:10.1016/j.mssp.2015.02.085 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Khatir, Nadia Mahmoudi Abdul Malek, Zulkurnain Banihashemian, Seyedeh Maryam Influences of magnetic fields on current-voltage characteristics of gold-DNA-gold structure with variable gaps |
| title | Influences of magnetic fields on current-voltage characteristics of gold-DNA-gold structure with variable gaps |
| title_full | Influences of magnetic fields on current-voltage characteristics of gold-DNA-gold structure with variable gaps |
| title_fullStr | Influences of magnetic fields on current-voltage characteristics of gold-DNA-gold structure with variable gaps |
| title_full_unstemmed | Influences of magnetic fields on current-voltage characteristics of gold-DNA-gold structure with variable gaps |
| title_short | Influences of magnetic fields on current-voltage characteristics of gold-DNA-gold structure with variable gaps |
| title_sort | influences of magnetic fields on current voltage characteristics of gold dna gold structure with variable gaps |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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