Performance evaluation of silicon nanowire gate-all-around field-effect transistors and their dependence of channel length and diameter
The performance of a semiconducting Silicon Nanowire (SiNW) Gate-All-Around (GAA) transistors as basic logic gates are assessed and tabulated for certain metric, against those of metal-oxide-semiconductor fieldeffect transistors (MOSFETs). Both SiNW and nano-MOSFET models agree considerably well wit...
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American Scientific Publishers
2015
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