Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were...
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Amer Inst Physics
2014
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| author | Muhammad, Rosnita Ahamad, Rahmalan Ibrahim, Zuhairi Othaman, Zulkafli |
| author_facet | Muhammad, Rosnita Ahamad, Rahmalan Ibrahim, Zuhairi Othaman, Zulkafli |
| author_sort | Muhammad, Rosnita |
| collection | ePrints |
| description | Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity. |
| first_indexed | 2024-03-05T19:54:31Z |
| format | Article |
| id | utm.eprints-62697 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T19:54:31Z |
| publishDate | 2014 |
| publisher | Amer Inst Physics |
| record_format | dspace |
| spelling | utm.eprints-626972017-06-05T02:01:05Z http://eprints.utm.my/62697/ Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters Muhammad, Rosnita Ahamad, Rahmalan Ibrahim, Zuhairi Othaman, Zulkafli Q Science Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity. Amer Inst Physics 2014 Article PeerReviewed Muhammad, Rosnita and Ahamad, Rahmalan and Ibrahim, Zuhairi and Othaman, Zulkafli (2014) Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters. Frontiers in Physics, 1588 . pp. 257-260. ISSN 0094-243X https://dx.doi.org/10.1063/1.4866956 DOI:10.1063/1.4866956 |
| spellingShingle | Q Science Muhammad, Rosnita Ahamad, Rahmalan Ibrahim, Zuhairi Othaman, Zulkafli Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters |
| title | Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters |
| title_full | Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters |
| title_fullStr | Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters |
| title_full_unstemmed | Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters |
| title_short | Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters |
| title_sort | structure and electrical characterization of gallium arsenide nanowires with different v iii ratio growth parameters |
| topic | Q Science |
| work_keys_str_mv | AT muhammadrosnita structureandelectricalcharacterizationofgalliumarsenidenanowireswithdifferentviiiratiogrowthparameters AT ahamadrahmalan structureandelectricalcharacterizationofgalliumarsenidenanowireswithdifferentviiiratiogrowthparameters AT ibrahimzuhairi structureandelectricalcharacterizationofgalliumarsenidenanowireswithdifferentviiiratiogrowthparameters AT othamanzulkafli structureandelectricalcharacterizationofgalliumarsenidenanowireswithdifferentviiiratiogrowthparameters |