Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were...

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Bibliographic Details
Main Authors:	Muhammad, Rosnita, Ahamad, Rahmalan, Ibrahim, Zuhairi, Othaman, Zulkafli
Format:	Article
Published:	Amer Inst Physics 2014
Subjects:	Q Science

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