Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region
We demonstrate a passive Q-switched at 2 um region by integrating Bismuth (III) Telluride (Bi2/Te3) embedded in Polyvinyl Alcohol (PVA). Bi2Te3 was embedded in PVA by solution casting approach to develop a Bi2/Te3-PVA film and integrated in the laser cavity with ring configuration to generate pulse...
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| Format: | Article |
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Photonics Society of Poland
2016
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| _version_ | 1796861550556872704 |
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| author | Ahmad, Fauzan Ibrahim, Mohd. Haniff Sulaiman, Wadi Harun Zuikafly, Siti Nur Fatin Muhamad Apandi, Nur Hidayah |
| author_facet | Ahmad, Fauzan Ibrahim, Mohd. Haniff Sulaiman, Wadi Harun Zuikafly, Siti Nur Fatin Muhamad Apandi, Nur Hidayah |
| author_sort | Ahmad, Fauzan |
| collection | ePrints |
| description | We demonstrate a passive Q-switched at 2 um region by integrating Bismuth (III) Telluride (Bi2/Te3) embedded in Polyvinyl Alcohol (PVA). Bi2Te3 was embedded in PVA by solution casting approach to develop a Bi2/Te3-PVA film and integrated in the laser cavity with ring configuration to generate pulse laser. The experimental works show that the proposed passive saturable absorber operates at input pump power ranges from 637 mW to 784 mW with central wavelength of 1957.6 nm. We observed the tunable repetition rate from 12.6 kHz to 26.1 kHz with the shortest pulse width of 2.22 us. The laser produces maximum instantaneous output peak power and pulse energy of 0.42 W and 0.94 uJ, respectively. |
| first_indexed | 2024-03-05T19:58:06Z |
| format | Article |
| id | utm.eprints-66882 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T19:58:06Z |
| publishDate | 2016 |
| publisher | Photonics Society of Poland |
| record_format | dspace |
| spelling | utm.eprints-668822017-11-20T08:52:04Z http://eprints.utm.my/66882/ Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region Ahmad, Fauzan Ibrahim, Mohd. Haniff Sulaiman, Wadi Harun Zuikafly, Siti Nur Fatin Muhamad Apandi, Nur Hidayah T Technology TK Electrical engineering. Electronics Nuclear engineering We demonstrate a passive Q-switched at 2 um region by integrating Bismuth (III) Telluride (Bi2/Te3) embedded in Polyvinyl Alcohol (PVA). Bi2Te3 was embedded in PVA by solution casting approach to develop a Bi2/Te3-PVA film and integrated in the laser cavity with ring configuration to generate pulse laser. The experimental works show that the proposed passive saturable absorber operates at input pump power ranges from 637 mW to 784 mW with central wavelength of 1957.6 nm. We observed the tunable repetition rate from 12.6 kHz to 26.1 kHz with the shortest pulse width of 2.22 us. The laser produces maximum instantaneous output peak power and pulse energy of 0.42 W and 0.94 uJ, respectively. Photonics Society of Poland 2016-01-12 Article PeerReviewed Ahmad, Fauzan and Ibrahim, Mohd. Haniff and Sulaiman, Wadi Harun and Zuikafly, Siti Nur Fatin and Muhamad Apandi, Nur Hidayah (2016) Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region. Photonics Letters of Poland, 8 (4). pp. 101-103. ISSN 2080-2242 http://dx.doi.org/10.4302/plp.2016.4.04 DOI: 10.4302/plp.2016.4.04 |
| spellingShingle | T Technology TK Electrical engineering. Electronics Nuclear engineering Ahmad, Fauzan Ibrahim, Mohd. Haniff Sulaiman, Wadi Harun Zuikafly, Siti Nur Fatin Muhamad Apandi, Nur Hidayah Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region |
| title | Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region |
| title_full | Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region |
| title_fullStr | Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region |
| title_full_unstemmed | Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region |
| title_short | Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region |
| title_sort | bismuth iii telluride bi2te3 embedded in pva as a passive saturable absorber in a 2 micron region |
| topic | T Technology TK Electrical engineering. Electronics Nuclear engineering |
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