Selective aspect ratio of CNTs based on annealing temperature by TCVD method
Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicat...
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| Format: | Conference or Workshop Item |
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American Institute of Physics Inc.
2016
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| author | Yousefi, A. T. Mahmood, M. R. Ikeda, S. |
| author_facet | Yousefi, A. T. Mahmood, M. R. Ikeda, S. |
| author_sort | Yousefi, A. T. |
| collection | ePrints |
| description | Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicate that the nanotubes are approximately perpendicular to the surface of the silicon substrate and form carbon nanotubes in different aspect ratios according to the applied annealing temperature. Furthermore, due to the optimized results it can be observed that, the mechanism of the CNTs growth is still present in the annealing step as well as deposition process and the most CNTs with crystalline aspect, produced in the annealing temperature, which was optimized at 700 - 900 C. This result demonstrates that the growth rate, mass production, diameter, density, and crystallinity of CNT can be controlled by the annealing temperature. |
| first_indexed | 2024-03-05T20:05:27Z |
| format | Conference or Workshop Item |
| id | utm.eprints-73165 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T20:05:27Z |
| publishDate | 2016 |
| publisher | American Institute of Physics Inc. |
| record_format | dspace |
| spelling | utm.eprints-731652017-11-20T08:33:48Z http://eprints.utm.my/73165/ Selective aspect ratio of CNTs based on annealing temperature by TCVD method Yousefi, A. T. Mahmood, M. R. Ikeda, S. T Technology (General) Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicate that the nanotubes are approximately perpendicular to the surface of the silicon substrate and form carbon nanotubes in different aspect ratios according to the applied annealing temperature. Furthermore, due to the optimized results it can be observed that, the mechanism of the CNTs growth is still present in the annealing step as well as deposition process and the most CNTs with crystalline aspect, produced in the annealing temperature, which was optimized at 700 - 900 C. This result demonstrates that the growth rate, mass production, diameter, density, and crystallinity of CNT can be controlled by the annealing temperature. American Institute of Physics Inc. 2016 Conference or Workshop Item PeerReviewed Yousefi, A. T. and Mahmood, M. R. and Ikeda, S. (2016) Selective aspect ratio of CNTs based on annealing temperature by TCVD method. In: International Conference on Nano-Electronic Technology Devices and Materials 2015, IC-NET 2015, 27 February 2015 through 2 March 2015, Selangor; Malaysia. https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984587038&doi=10.1063%2f1.4948855&partnerID=40&md5=25090315c5a597011560083a6c609bb5 |
| spellingShingle | T Technology (General) Yousefi, A. T. Mahmood, M. R. Ikeda, S. Selective aspect ratio of CNTs based on annealing temperature by TCVD method |
| title | Selective aspect ratio of CNTs based on annealing temperature by TCVD method |
| title_full | Selective aspect ratio of CNTs based on annealing temperature by TCVD method |
| title_fullStr | Selective aspect ratio of CNTs based on annealing temperature by TCVD method |
| title_full_unstemmed | Selective aspect ratio of CNTs based on annealing temperature by TCVD method |
| title_short | Selective aspect ratio of CNTs based on annealing temperature by TCVD method |
| title_sort | selective aspect ratio of cnts based on annealing temperature by tcvd method |
| topic | T Technology (General) |
| work_keys_str_mv | AT yousefiat selectiveaspectratioofcntsbasedonannealingtemperaturebytcvdmethod AT mahmoodmr selectiveaspectratioofcntsbasedonannealingtemperaturebytcvdmethod AT ikedas selectiveaspectratioofcntsbasedonannealingtemperaturebytcvdmethod |