Growth of well-oriented VACNTs using thermal chemical vapor deposition method

The remarkable properties of carbon nanotubes (CNTs) make them attractive for biosensor applications, especially for medical detecting devices. In this paper, we describe a process to grow high oriented ratio CNT arrays to improve the electrical properties of the devices based on CNTs. Chemical vapo...

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Main Authors: Yousefi, A. T., Mahmood, M. R., Ikeda, S.
Format: Conference or Workshop Item
Published: American Institute of Physics Inc. 2016
Subjects:
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author Yousefi, A. T.
Mahmood, M. R.
Ikeda, S.
author_facet Yousefi, A. T.
Mahmood, M. R.
Ikeda, S.
author_sort Yousefi, A. T.
collection ePrints
description The remarkable properties of carbon nanotubes (CNTs) make them attractive for biosensor applications, especially for medical detecting devices. In this paper, we describe a process to grow high oriented ratio CNT arrays to improve the electrical properties of the devices based on CNTs. Chemical vapor deposition (CVD) was used to grow highly oriented CNT using camphor as the carbon source, and argon and hydrogen as carrier gases to grow perpendicular CNTs on the surface of the silicon substrate in presence of ferrocene as a metallic catalyst. Images were revealed by FESEM indicates that the formation mechanism of oriented CNTs with high morphological purity nanotubes, which is depends significantly on deposition time and applied temperature to the furnaces. This method might be an effective method to produce oriented MWCNT in different length.
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institution Universiti Teknologi Malaysia - ePrints
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spelling utm.eprints-731662017-11-20T08:33:48Z http://eprints.utm.my/73166/ Growth of well-oriented VACNTs using thermal chemical vapor deposition method Yousefi, A. T. Mahmood, M. R. Ikeda, S. T Technology (General) The remarkable properties of carbon nanotubes (CNTs) make them attractive for biosensor applications, especially for medical detecting devices. In this paper, we describe a process to grow high oriented ratio CNT arrays to improve the electrical properties of the devices based on CNTs. Chemical vapor deposition (CVD) was used to grow highly oriented CNT using camphor as the carbon source, and argon and hydrogen as carrier gases to grow perpendicular CNTs on the surface of the silicon substrate in presence of ferrocene as a metallic catalyst. Images were revealed by FESEM indicates that the formation mechanism of oriented CNTs with high morphological purity nanotubes, which is depends significantly on deposition time and applied temperature to the furnaces. This method might be an effective method to produce oriented MWCNT in different length. American Institute of Physics Inc. 2016 Conference or Workshop Item PeerReviewed Yousefi, A. T. and Mahmood, M. R. and Ikeda, S. (2016) Growth of well-oriented VACNTs using thermal chemical vapor deposition method. In: International Conference on Nano-Electronic Technology Devices and Materials 2015, 27 February 2015 through 2 March 2015, Selangor; Malaysia. https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984588953&doi=10.1063%2f1.4948856&partnerID=40&md5=4b9f569e2416f8ef8042ba2eeb55709c
spellingShingle T Technology (General)
Yousefi, A. T.
Mahmood, M. R.
Ikeda, S.
Growth of well-oriented VACNTs using thermal chemical vapor deposition method
title Growth of well-oriented VACNTs using thermal chemical vapor deposition method
title_full Growth of well-oriented VACNTs using thermal chemical vapor deposition method
title_fullStr Growth of well-oriented VACNTs using thermal chemical vapor deposition method
title_full_unstemmed Growth of well-oriented VACNTs using thermal chemical vapor deposition method
title_short Growth of well-oriented VACNTs using thermal chemical vapor deposition method
title_sort growth of well oriented vacnts using thermal chemical vapor deposition method
topic T Technology (General)
work_keys_str_mv AT yousefiat growthofwellorientedvacntsusingthermalchemicalvapordepositionmethod
AT mahmoodmr growthofwellorientedvacntsusingthermalchemicalvapordepositionmethod
AT ikedas growthofwellorientedvacntsusingthermalchemicalvapordepositionmethod