Effect of GaAs multi-atomic steps thickness on the structural and optical properties of self-assembled In0.5Ga0.5As quantum dots
Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown on various thickness of GaAs multi-atomic steps layer using Stranski-Kratanov (SK) growth mode. Atomic force microscopy (AFM) analysis indicates fluctuation of size and density of the dots. The varieties of dots formed on the surface are beli...
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| Format: | Conference or Workshop Item |
| Published: |
American Institute of Physics Inc.
2016
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