Characterization of strained silicon MOSFET using semiconductor TCAD tools
The paper is looking into the enhancement of conventional PMOS by incorporating a strained silicon within the channel and bulk of semiconductor. A detailed 2D process simulation of strained silicon PMOS (SSPMos) and its electrical characterization was done using TCAD tool. With the oxide thickness,...
| Principais autores: | , , |
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| Formato: | Conference or Workshop Item |
| Idioma: | English |
| Publicado em: |
2006
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| Assuntos: | |
| Acesso em linha: | http://eprints.utm.my/7495/1/Razali_Ismail_2006_Characterization_of_Strained_Silicon_MOSFET.pdf |