Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

The evolution of metal-oxide-semiconductor field effect transistor (MOSFET) technology has been governed mainly by device scaling over the past twenty years. One of the key questions concerning future ULSI technology is whether MOSFET devices can be scaled to 100 nmchannel length and beyond for cont...

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Dettagli Bibliografici
Autori principali:	Teoh, Chin Hong, Ismail, Razali
Natura:	Conference or Workshop Item
Lingua:	English
Pubblicazione:	2006
Soggetti:	TK Electrical engineering. Electronics Nuclear engineering
Accesso online:	http://eprints.utm.my/7496/1/Razali_Ismail_2006_Device_Design_Consideration_for_Nanoscale.pdf

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