Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

The evolution of metal-oxide-semiconductor field effect transistor (MOSFET) technology has been governed mainly by device scaling over the past twenty years. One of the key questions concerning future ULSI technology is whether MOSFET devices can be scaled to 100 nmchannel length and beyond for cont...

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Podrobná bibliografie
Hlavní autoři: Teoh, Chin Hong, Ismail, Razali
Médium: Conference or Workshop Item
Jazyk:English
Vydáno: 2006
Témata:
On-line přístup:http://eprints.utm.my/7496/1/Razali_Ismail_2006_Device_Design_Consideration_for_Nanoscale.pdf

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